Formation of graded SiGe on insulator by segregation-controlled rapid-melting-growth

R. Matsumura, Y. Tojo, H. Yokoyama, M. Kurosawa, Taizoh Sadoh, M. Miyao

研究成果: 著書/レポートタイプへの貢献会議での発言

抜粋

Formation of laterally-graded single-crystal SiGe-on-insulator structures by rapid-melting-growth of a-SiGe is investigated. From micro-probe Raman scattering spectroscopy measurements, it is revealed that the Si concentration profiles in grown SiGe layers are significantly affected by the growth conditions and sample sizes. Based on the systematical analysis of the phenomena, effects of the growth rate on Si segregation kinetics in rapid-melting growth are clarified. These findings are expected to be useful to obtain epitaxial templates with laterally-variable lattice constants for 2-dimensional integration of various functional devices on an Si-platform.

元の言語英語
ホスト出版物のタイトルSiGe, Ge, and Related Compounds 5
ホスト出版物のサブタイトルMaterials, Processing, and Devices
ページ747-751
ページ数5
エディション9
DOI
出版物ステータス出版済み - 12 1 2012
イベント5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting - Honolulu, HI, 米国
継続期間: 10 7 201210 12 2012

出版物シリーズ

名前ECS Transactions
番号9
50
ISSN(印刷物)1938-5862
ISSN(電子版)1938-6737

その他

その他5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting
米国
Honolulu, HI
期間10/7/1210/12/12

    フィンガープリント

All Science Journal Classification (ASJC) codes

  • Engineering(all)

これを引用

Matsumura, R., Tojo, Y., Yokoyama, H., Kurosawa, M., Sadoh, T., & Miyao, M. (2012). Formation of graded SiGe on insulator by segregation-controlled rapid-melting-growth. : SiGe, Ge, and Related Compounds 5: Materials, Processing, and Devices (9 版, pp. 747-751). (ECS Transactions; 巻数 50, 番号 9). https://doi.org/10.1149/05009.0747ecst