The effects of the hydrogen ion (H+) implantation on the stress relaxation of SiGe layers on insulator (SGOI) during the oxidation-induced Ge condensation process have been investigated. The stress relaxation of SGOI layers was significantly improved by using high dose (>1015 cm-2) H+ implantation. However, the radiation-enhanced oxidation was also generated by the implantation. In order to suppress the enhanced oxidation and realize the precise control of the Ge fraction, the two-step annealing (1st: 500°C for 30 min, 2nd: 850°C for 60 min) was proposed. The results showed that the enhanced oxidation was completely suppressed by the two-step annealing with keeping the enhanced relaxation. The improvement was tentatively assigned to the enhanced gliding at the c-Si 1-xGex/buried oxide (BOX) interfaces. This newly developed combination method of H+ implantation, the two-step annealing, and the oxidation-induced Ge, condensation will be a powerful tool to fabricate highly relaxed SGOI.
|出版ステータス||出版済み - 12 1 2004|
|イベント||SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium - Honolulu, HI, 米国|
継続期間: 10 3 2004 → 10 8 2004
|その他||SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium|
|Period||10/3/04 → 10/8/04|
All Science Journal Classification (ASJC) codes