Formation of high quality SGOI structure by modified oxidation-induced GE condensation process

T. Sadoh, R. Matsuura, I. Tsunoda, M. Ninomiya, M. Nakamae, T. Enokida, H. Hagino, M. Miyao

研究成果: Contribution to conferencePaper査読

抄録

The effects of the hydrogen ion (H+) implantation on the stress relaxation of SiGe layers on insulator (SGOI) during the oxidation-induced Ge condensation process have been investigated. The stress relaxation of SGOI layers was significantly improved by using high dose (>1015 cm-2) H+ implantation. However, the radiation-enhanced oxidation was also generated by the implantation. In order to suppress the enhanced oxidation and realize the precise control of the Ge fraction, the two-step annealing (1st: 500°C for 30 min, 2nd: 850°C for 60 min) was proposed. The results showed that the enhanced oxidation was completely suppressed by the two-step annealing with keeping the enhanced relaxation. The improvement was tentatively assigned to the enhanced gliding at the c-Si 1-xGex/buried oxide (BOX) interfaces. This newly developed combination method of H+ implantation, the two-step annealing, and the oxidation-induced Ge, condensation will be a powerful tool to fabricate highly relaxed SGOI.

本文言語英語
ページ887-892
ページ数6
出版ステータス出版済み - 12 1 2004
イベントSiGe: Materials, Processing, and Devices - Proceedings of the First Symposium - Honolulu, HI, 米国
継続期間: 10 3 200410 8 2004

その他

その他SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium
国/地域米国
CityHonolulu, HI
Period10/3/0410/8/04

All Science Journal Classification (ASJC) codes

  • 工学(全般)

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