Formation of high quality SGOI structure by modified oxidation-induced GE condensation process

The effects of the hydrogen ion (H⁺) implantation on the stress relaxation of SiGe layers on insulator (SGOI) during the oxidation-induced Ge condensation process have been investigated. The stress relaxation of SGOI layers was significantly improved by using high dose (>10¹⁵ cm^-2) H⁺ implantation. However, the radiation-enhanced oxidation was also generated by the implantation. In order to suppress the enhanced oxidation and realize the precise control of the Ge fraction, the two-step annealing (1st: 500°C for 30 min, 2nd: 850°C for 60 min) was proposed. The results showed that the enhanced oxidation was completely suppressed by the two-step annealing with keeping the enhanced relaxation. The improvement was tentatively assigned to the enhanced gliding at the c-Si _1-xGe_x/buried oxide (BOX) interfaces. This newly developed combination method of H⁺ implantation, the two-step annealing, and the oxidation-induced Ge, condensation will be a powerful tool to fabricate highly relaxed SGOI.