Formation of large-grain crystalline germanium on single layer graphene on insulator by rapid melting growth

Tahsin Morshed, Yuki Kai, Ryo Matsumura, Jong Hyeok Park, Hironori Chikita, Taizoh Sadoh, Abdul Manaf Hashim

研究成果: Contribution to journalArticle査読

抄録

We demonstrate the crystallization of thermally deposited amorphous germanium (Ge) microstrips on single layer graphene (SLG) by rapid melting growth. Lateral growth of large grain crystalline Ge was successfully obtained over entire microstrip structure. SLG has shown its capability to suppress the spontaneous nucleation in the melting Ge, where no or less intermixing of C and Ge atoms has been detected. The interaction of C atoms from the graphene and Ge atoms at the interface is the possible reason for the observation of large compressive strain generated in the Ge strip grown on SLG. This technique provides an innovative breakthrough towards the realization of single-crystalline Ge-on-insulator (GOI) structure on SLG to facilitate the next-generation ultra-large-scale integrated circuits (ULSIs) with multifunctionalities.

本文言語英語
ページ(範囲)147-150
ページ数4
ジャーナルMaterials Letters
178
DOI
出版ステータス出版済み - 9 1 2016

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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