Formation of large grain Ge single crystal on insulating substrate by liquid-solid coexisting annealing of a-Ge(Sn)

R. Matsumura, Y. Kai, H. Chikita, T. Sadoh, M. Miyao

研究成果: ジャーナルへの寄稿会議記事査読

抄録

To realize next generation thin-film-transistors (TFTs), seedless rapidmelting growth of Ge on insulator is investigated. By rapid-thermal annealing (RTA) of amorphous GeSn (a-GeSn) layers on insulating substrates at a temperature between the solidification point and the melting point, GeSn layers melt incompletely, which generates a limited number of solid nuclei as residue. Once cooling starts, liquid-phase epitaxial growth occurs from these nuclei, which results in growth of large-grain crystals. Since segregation coefficient of Sn in Ge is very small (∼0.02), almost all Sn atoms segregate at edges of the grown regions. As a result, almost Snfree (≤1%) large Ge crystal grains are achieved on insulating substrates by a self-organizing process.

本文言語英語
ページ(範囲)97-100
ページ数4
ジャーナルECS Transactions
61
3
DOI
出版ステータス出版済み - 2014
イベントInternational Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 4 - 225th ECS Meeting - Orlando, 米国
継続期間: 5月 11 20145月 15 2014

!!!All Science Journal Classification (ASJC) codes

  • 工学(全般)

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