Formation of low resistance contacts to p-type 4H-SiC using al-film source laser doping

Kento Okamoto, Toshifumi Kikuchi, Akihiro Ikeda, Hiroshi Ikenoue, Tanemasa Asano

研究成果: 書籍/レポート タイプへの寄稿会議への寄与

抄録

Impact of laser doping on the formation of ohmic contacts to 4H-SiC has been investigated. The laser doping was performed by irradiating pulse-width stretched KrF excimer laser to an Al film coated on the surface of 4H-SiC. Doping and contact formation on the carbon face of 4H-SiC were investigated. The doping was carried out while keeping the sample at room temperature. It is found that the laser doping is able to introduce Al up to a concentration as high as 5×1021 cm-3. As a result of heavy doping, the contact made of Ti/Al metallization provides the ohmic contact whose specific contact resistance as low as 4.0×10-6 Ωcm2 without additional heat treatment. The specific contact resistance is lower than that reported for ohmic contacts formed by using ion implantation.

本文言語英語
ホスト出版物のタイトルPHOTOPTICS 2019 - Proceedings of the 7th International Conference on Photonics, Optics and Laser Technology
編集者Maria Raposo, Paulo Ribeiro, David Andrews
出版社SciTePress
ページ294-298
ページ数5
ISBN(電子版)9789897583643
DOI
出版ステータス出版済み - 2019
イベント7th International Conference on Photonics, Optics and Laser Technology, PHOTOPTICS 2019 - Prague, チェコ共和国
継続期間: 2月 25 20192月 27 2019

出版物シリーズ

名前PHOTOPTICS 2019 - Proceedings of the 7th International Conference on Photonics, Optics and Laser Technology

会議

会議7th International Conference on Photonics, Optics and Laser Technology, PHOTOPTICS 2019
国/地域チェコ共和国
CityPrague
Period2/25/192/27/19

!!!All Science Journal Classification (ASJC) codes

  • 原子分子物理学および光学

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