TY - JOUR
T1 - Formation of low resistance contacts to p-type 4H-SiC using laser doping with an Al thin-film dopant source
AU - Okamoto, Kento
AU - Kikuchi, Toshifumi
AU - Ikeda, Akihiro
AU - Ikenoue, Hiroshi
AU - Asano, Tanemasa
N1 - Funding Information:
This work is supported in part by Grants-in-Aid for Scientific Research, KAKENHI, (No. JP17K06387 and No. JP16H02342) from the Japan Society for the Promotion of Science. A part of this work was carried out using the facility of Department of Gigaphoton Next GLP.
Publisher Copyright:
© 2019 The Japan Society of Applied Physics.
PY - 2019
Y1 - 2019
N2 - The effect of laser doping on the contact resistance of ohmic contact to 4H-SiC has been investigated. Laser doping was performed by irradiating a pulse-width stretched KrF excimer laser to an Al film coated on the surface of 4H-SiC. Doping and contact formation on the C-face were investigated. The doping was carried out while keeping the sample at room temperature. The experimental results suggest that the contact made of Ti/Al can achieve specific contact resistance as low as 4.0 × 10-6 Ωcm2 without additional heat treatment. The contact resistance is lower than that reported for ohmic contacts formed using ion implantation.
AB - The effect of laser doping on the contact resistance of ohmic contact to 4H-SiC has been investigated. Laser doping was performed by irradiating a pulse-width stretched KrF excimer laser to an Al film coated on the surface of 4H-SiC. Doping and contact formation on the C-face were investigated. The doping was carried out while keeping the sample at room temperature. The experimental results suggest that the contact made of Ti/Al can achieve specific contact resistance as low as 4.0 × 10-6 Ωcm2 without additional heat treatment. The contact resistance is lower than that reported for ohmic contacts formed using ion implantation.
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U2 - 10.7567/1347-4065/ab12c3
DO - 10.7567/1347-4065/ab12c3
M3 - Article
AN - SCOPUS:85069048181
VL - 58
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - SD
M1 - SDDF13
ER -