Formation of low resistance contacts to p-type 4H-SiC using laser doping with an Al thin-film dopant source

Kento Okamoto, Toshifumi Kikuchi, Akihiro Ikeda, Hiroshi Ikenoue, Tanemasa Asano

研究成果: Contribution to journalArticle査読

抄録

The effect of laser doping on the contact resistance of ohmic contact to 4H-SiC has been investigated. Laser doping was performed by irradiating a pulse-width stretched KrF excimer laser to an Al film coated on the surface of 4H-SiC. Doping and contact formation on the C-face were investigated. The doping was carried out while keeping the sample at room temperature. The experimental results suggest that the contact made of Ti/Al can achieve specific contact resistance as low as 4.0 × 10-6 Ωcm2 without additional heat treatment. The contact resistance is lower than that reported for ohmic contacts formed using ion implantation.

本文言語英語
論文番号SDDF13
ジャーナルJapanese journal of applied physics
58
SD
DOI
出版ステータス出版済み - 2019

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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