Formation of low resistance contacts to p-type 4H-SiC using laser doping with an Al thin-film dopant source

Kento Okamoto, Toshifumi Kikuchi, Akihiro Ikeda, Hiroshi Ikenoue, Tanemasa Asano

研究成果: ジャーナルへの寄稿 › 記事

抄録

The effect of laser doping on the contact resistance of ohmic contact to 4H-SiC has been investigated. Laser doping was performed by irradiating a pulse-width stretched KrF excimer laser to an Al film coated on the surface of 4H-SiC. Doping and contact formation on the C-face were investigated. The doping was carried out while keeping the sample at room temperature. The experimental results suggest that the contact made of Ti/Al can achieve specific contact resistance as low as 4.0 × 10-6 Ωcm2 without additional heat treatment. The contact resistance is lower than that reported for ohmic contacts formed using ion implantation.

元の言語英語
記事番号SDDF13
ジャーナルJapanese Journal of Applied Physics
巻58
発行部数SD
DOI
出版物ステータス出版済み - 1 1 2019

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low resistance
Contact resistance
Light sources
contact resistance
Doping (additives)
Thin films
Ohmic contacts
Lasers
thin films
lasers
electric contacts
Excimer lasers
Ion implantation
excimer lasers
ion implantation
Laser pulses
pulse duration
heat treatment
Heat treatment
room temperature

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

これを引用

Formation of low resistance contacts to p-type 4H-SiC using laser doping with an Al thin-film dopant source. / Okamoto, Kento; Kikuchi, Toshifumi; Ikeda, Akihiro; Ikenoue, Hiroshi; Asano, Tanemasa.

：: Japanese Journal of Applied Physics, 巻 58, 番号 SD, SDDF13, 01.01.2019.

研究成果: ジャーナルへの寄稿 › 記事

Okamoto, K, Kikuchi, T, Ikeda, A, Ikenoue, H & Asano, T 2019, 'Formation of low resistance contacts to p-type 4H-SiC using laser doping with an Al thin-film dopant source', Japanese Journal of Applied Physics, 巻. 58, 番号 SD, SDDF13. https://doi.org/10.7567/1347-4065/ab12c3
Okamoto K, Kikuchi T, Ikeda A, Ikenoue H, Asano T. Formation of low resistance contacts to p-type 4H-SiC using laser doping with an Al thin-film dopant source. Japanese Journal of Applied Physics. 2019 1 1;58(SD). SDDF13. https://doi.org/10.7567/1347-4065/ab12c3
Okamoto, Kento ; Kikuchi, Toshifumi ; Ikeda, Akihiro ; Ikenoue, Hiroshi ; Asano, Tanemasa. / Formation of low resistance contacts to p-type 4H-SiC using laser doping with an Al thin-film dopant source. ：: Japanese Journal of Applied Physics. 2019 ; 巻 58, 番号 SD.
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abstract = "The effect of laser doping on the contact resistance of ohmic contact to 4H-SiC has been investigated. Laser doping was performed by irradiating a pulse-width stretched KrF excimer laser to an Al film coated on the surface of 4H-SiC. Doping and contact formation on the C-face were investigated. The doping was carried out while keeping the sample at room temperature. The experimental results suggest that the contact made of Ti/Al can achieve specific contact resistance as low as 4.0 × 10-6 Ωcm2 without additional heat treatment. The contact resistance is lower than that reported for ohmic contacts formed using ion implantation.",
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AU - Ikenoue, Hiroshi

AU - Asano, Tanemasa

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N2 - The effect of laser doping on the contact resistance of ohmic contact to 4H-SiC has been investigated. Laser doping was performed by irradiating a pulse-width stretched KrF excimer laser to an Al film coated on the surface of 4H-SiC. Doping and contact formation on the C-face were investigated. The doping was carried out while keeping the sample at room temperature. The experimental results suggest that the contact made of Ti/Al can achieve specific contact resistance as low as 4.0 × 10-6 Ωcm2 without additional heat treatment. The contact resistance is lower than that reported for ohmic contacts formed using ion implantation.

AB - The effect of laser doping on the contact resistance of ohmic contact to 4H-SiC has been investigated. Laser doping was performed by irradiating a pulse-width stretched KrF excimer laser to an Al film coated on the surface of 4H-SiC. Doping and contact formation on the C-face were investigated. The doping was carried out while keeping the sample at room temperature. The experimental results suggest that the contact made of Ti/Al can achieve specific contact resistance as low as 4.0 × 10-6 Ωcm2 without additional heat treatment. The contact resistance is lower than that reported for ohmic contacts formed using ion implantation.

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