Formation of low resistance contacts to p-type 4H-SiC using laser doping with an Al thin-film dopant source

Kento Okamoto; Toshifumi Kikuchi; Akihiro Ikeda; Hiroshi Ikenoue; Tanemasa Asano

doi:10.7567/1347-4065/ab12c3

Formation of low resistance contacts to p-type 4H-SiC using laser doping with an Al thin-film dopant source

Kento Okamoto, Toshifumi Kikuchi, Akihiro Ikeda, Hiroshi Ikenoue, Tanemasa Asano

研究成果: Contribution to journal › Article › 査読

抄録

The effect of laser doping on the contact resistance of ohmic contact to 4H-SiC has been investigated. Laser doping was performed by irradiating a pulse-width stretched KrF excimer laser to an Al film coated on the surface of 4H-SiC. Doping and contact formation on the C-face were investigated. The doping was carried out while keeping the sample at room temperature. The experimental results suggest that the contact made of Ti/Al can achieve specific contact resistance as low as 4.0 × 10^-6 Ωcm² without additional heat treatment. The contact resistance is lower than that reported for ohmic contacts formed using ion implantation.

本文言語	英語
論文番号	SDDF13
ジャーナル	Japanese journal of applied physics
巻	58
号	SD
DOI	https://doi.org/10.7567/1347-4065/ab12c3
出版ステータス	出版済み - 2019

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

文献へのアクセス

10.7567/1347-4065/ab12c3

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引用スタイル

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title = "Formation of low resistance contacts to p-type 4H-SiC using laser doping with an Al thin-film dopant source",

abstract = "The effect of laser doping on the contact resistance of ohmic contact to 4H-SiC has been investigated. Laser doping was performed by irradiating a pulse-width stretched KrF excimer laser to an Al film coated on the surface of 4H-SiC. Doping and contact formation on the C-face were investigated. The doping was carried out while keeping the sample at room temperature. The experimental results suggest that the contact made of Ti/Al can achieve specific contact resistance as low as 4.0 × 10-6 Ωcm2 without additional heat treatment. The contact resistance is lower than that reported for ohmic contacts formed using ion implantation.",

author = "Kento Okamoto and Toshifumi Kikuchi and Akihiro Ikeda and Hiroshi Ikenoue and Tanemasa Asano",

note = "Funding Information: This work is supported in part by Grants-in-Aid for Scientific Research, KAKENHI, (No. JP17K06387 and No. JP16H02342) from the Japan Society for the Promotion of Science. A part of this work was carried out using the facility of Department of Gigaphoton Next GLP. Publisher Copyright: {\textcopyright} 2019 The Japan Society of Applied Physics.",

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doi = "10.7567/1347-4065/ab12c3",

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journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

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TY - JOUR

T1 - Formation of low resistance contacts to p-type 4H-SiC using laser doping with an Al thin-film dopant source

AU - Okamoto, Kento

AU - Kikuchi, Toshifumi

AU - Ikeda, Akihiro

AU - Ikenoue, Hiroshi

AU - Asano, Tanemasa

N1 - Funding Information: This work is supported in part by Grants-in-Aid for Scientific Research, KAKENHI, (No. JP17K06387 and No. JP16H02342) from the Japan Society for the Promotion of Science. A part of this work was carried out using the facility of Department of Gigaphoton Next GLP. Publisher Copyright: © 2019 The Japan Society of Applied Physics.

PY - 2019

Y1 - 2019

N2 - The effect of laser doping on the contact resistance of ohmic contact to 4H-SiC has been investigated. Laser doping was performed by irradiating a pulse-width stretched KrF excimer laser to an Al film coated on the surface of 4H-SiC. Doping and contact formation on the C-face were investigated. The doping was carried out while keeping the sample at room temperature. The experimental results suggest that the contact made of Ti/Al can achieve specific contact resistance as low as 4.0 × 10-6 Ωcm2 without additional heat treatment. The contact resistance is lower than that reported for ohmic contacts formed using ion implantation.

AB - The effect of laser doping on the contact resistance of ohmic contact to 4H-SiC has been investigated. Laser doping was performed by irradiating a pulse-width stretched KrF excimer laser to an Al film coated on the surface of 4H-SiC. Doping and contact formation on the C-face were investigated. The doping was carried out while keeping the sample at room temperature. The experimental results suggest that the contact made of Ti/Al can achieve specific contact resistance as low as 4.0 × 10-6 Ωcm2 without additional heat treatment. The contact resistance is lower than that reported for ohmic contacts formed using ion implantation.

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