Formation of nanocrystalline Si by Au-catalyzed CH3SiH3 pulse jet CVD

Toshiaki Abe, Shouhei Anan, Fumiya Watanabe, Ryoji Takahashi, Yoshifumi Ikoma

    研究成果: 書籍/レポート タイプへの寄稿会議への寄与

    抄録

    Au-catalyzed growth of nanocrystalline Si by pulse jet chemical vapor deposition hasbeen investigated. Au thin film was first deposited on thermally oxidized Si(100), then CH3SiH3pulse jets were irradiated onto the Au/SiO2/Si(100) surface. The irradiation of the CH3SiH3 jets at1150 °C resulted in circular patterns with a diameter of ~40 μm on the sample surfaces. In thecenter of the circular patterns, agglomerations of Au were observed. It was found that the oxidelayer was etched and that nanocrystalline Si with diameters ~500 nm was formed in the circularpatterns. These results indicate that the nanocrystalline Si was grown by the VLS process in whichSi atoms were supplied from the oxide layer, Si substrate, and CH3SiH3 molecules.

    本文言語英語
    ホスト出版物のタイトルAdvanced Materials Science and Technology
    出版社Trans Tech Publications Ltd
    ページ244-247
    ページ数4
    ISBN(印刷版)9783037856604
    DOI
    出版ステータス出版済み - 2013
    イベント8th International Forum on Advanced Materials Science and Technology, IFAMST 2012 - Fukuoka City, 日本
    継続期間: 8月 1 20128月 4 2012

    出版物シリーズ

    名前Materials Science Forum
    750
    ISSN(印刷版)0255-5476
    ISSN(電子版)1662-9752

    その他

    その他8th International Forum on Advanced Materials Science and Technology, IFAMST 2012
    国/地域日本
    CityFukuoka City
    Period8/1/128/4/12

    !!!All Science Journal Classification (ASJC) codes

    • 材料科学(全般)
    • 凝縮系物理学
    • 材料力学
    • 機械工学

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