Formation of nanoporous SiO2 films with super-low dielectric constant by F2 laser deposition

Ryota Miyano, Toshifumi Kikuchi, Kaname Imokawa, Daisuke Nakamura, Hiroshi Ikenoue

研究成果: 著書/レポートタイプへの貢献会議での発言

抄録

Ultra-large scale integrated circuits (ULSIs) have been continually scaled down according to Moore's law. This can improve their power consumption and operation frequency but not the RC delay of their interconnections; to this end, super low dielectric constant films are required. We propose a novel method to fabricate porous SiO2 films with a super low dielectric constant by F2 laser deposition. In this method, a quartz target is evaporated by F2 laser ablation in vacuum-chamber-controlled Ar partial pressure. The evaporated SiO2molecules are agglomerated in the vacuum, and the size of the SiO2 nanoparticles are controlled by the Ar partial pressure. Porous SiO2 films are formed on a Si-receiving substrate, which is placed in front of the quartz target. The pulse duration of the F2 laser was approximately 20 ns, and the repetition rate of laser shots was 100 Hz. The base pressure of the vacuum chamber was 5 × 10-3 Pa. Then, Ar gas was introduced into the vacuum chamber through a mass flow controller to control the Ar partial pressure. The dominant size of the SiO2 nanoparticles decreased from 1.5-2.0 nm to 1.0-1.5 nm with the Ar partial pressure decreasing from 20 Pa to 4.5 Pa. In addition, the relative dielectric constant k of the porous SiO2 film formed at an Ar partial pressure of 4.5 Pa was 2.8, which is lower than that of thermal SiO2 (k = 4.0). In addition, the leakage current of the nanoporous SiO2 film was almost equal to that of the thermal SiO2 film. From these results, we conclude that nanoporous SiO2films with a super low dielectric constant can be formed by F2 laser deposition.

元の言語英語
ホスト出版物のタイトルSynthesis and Photonics of Nanoscale Materials XVI
編集者Andrei V. Kabashin, David B. Geohegan, Jan J. Dubowski
出版者SPIE
ISBN(電子版)9781510624566
DOI
出版物ステータス出版済み - 1 1 2019
イベントSynthesis and Photonics of Nanoscale Materials XVI 2019 - San Francisco, 米国
継続期間: 2 2 20192 3 2019

出版物シリーズ

名前Proceedings of SPIE - The International Society for Optical Engineering
10907
ISSN(印刷物)0277-786X
ISSN(電子版)1996-756X

会議

会議Synthesis and Photonics of Nanoscale Materials XVI 2019
米国
San Francisco
期間2/2/192/3/19

Fingerprint

laser deposition
Dielectric Constant
SiO2
Permittivity
Partial pressure
partial pressure
permittivity
Laser
Lasers
vacuum chambers
Vacuum
Partial
Quartz
quartz
Nanoparticles
base pressure
nanoparticles
mass flow
Laser ablation
Leakage currents

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

これを引用

Miyano, R., Kikuchi, T., Imokawa, K., Nakamura, D., & Ikenoue, H. (2019). Formation of nanoporous SiO2 films with super-low dielectric constant by F2 laser deposition. : A. V. Kabashin, D. B. Geohegan, & J. J. Dubowski (版), Synthesis and Photonics of Nanoscale Materials XVI [109070S] (Proceedings of SPIE - The International Society for Optical Engineering; 巻数 10907). SPIE. https://doi.org/10.1117/12.2509176

Formation of nanoporous SiO2 films with super-low dielectric constant by F2 laser deposition. / Miyano, Ryota; Kikuchi, Toshifumi; Imokawa, Kaname; Nakamura, Daisuke; Ikenoue, Hiroshi.

Synthesis and Photonics of Nanoscale Materials XVI. 版 / Andrei V. Kabashin; David B. Geohegan; Jan J. Dubowski. SPIE, 2019. 109070S (Proceedings of SPIE - The International Society for Optical Engineering; 巻 10907).

研究成果: 著書/レポートタイプへの貢献会議での発言

Miyano, R, Kikuchi, T, Imokawa, K, Nakamura, D & Ikenoue, H 2019, Formation of nanoporous SiO2 films with super-low dielectric constant by F2 laser deposition. : AV Kabashin, DB Geohegan & JJ Dubowski (版), Synthesis and Photonics of Nanoscale Materials XVI., 109070S, Proceedings of SPIE - The International Society for Optical Engineering, 巻. 10907, SPIE, Synthesis and Photonics of Nanoscale Materials XVI 2019, San Francisco, 米国, 2/2/19. https://doi.org/10.1117/12.2509176
Miyano R, Kikuchi T, Imokawa K, Nakamura D, Ikenoue H. Formation of nanoporous SiO2 films with super-low dielectric constant by F2 laser deposition. : Kabashin AV, Geohegan DB, Dubowski JJ, 編集者, Synthesis and Photonics of Nanoscale Materials XVI. SPIE. 2019. 109070S. (Proceedings of SPIE - The International Society for Optical Engineering). https://doi.org/10.1117/12.2509176
Miyano, Ryota ; Kikuchi, Toshifumi ; Imokawa, Kaname ; Nakamura, Daisuke ; Ikenoue, Hiroshi. / Formation of nanoporous SiO2 films with super-low dielectric constant by F2 laser deposition. Synthesis and Photonics of Nanoscale Materials XVI. 編集者 / Andrei V. Kabashin ; David B. Geohegan ; Jan J. Dubowski. SPIE, 2019. (Proceedings of SPIE - The International Society for Optical Engineering).
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