抄録
Ge films evaporated on GaAs(100) substrates have been amorphized by ion implantation and recrystallized epitaxially in the solid phase. Ohmic characteristics have been obtained in Ge/n-GaAs heterostructures by implantation of As+ or P+ in Ge and Si+ at the interface. A two-step annealing method was found to be effective to obtain ohmic characteristics. In two-step annealing, the first annealing step at low temperature is for solid phase recrystallization of Ge films; the second step involves rapid high-temperature annealing in order to activate the implanted species. It has also been found that interdiffusion should be minimized in order to obtain good ohmic characteristics.
本文言語 | 英語 |
---|---|
ページ(範囲) | 117-121 |
ページ数 | 5 |
ジャーナル | Japanese Journal of Applied Physics |
巻 | 26 |
号 | 1 R |
DOI | |
出版ステータス | 出版済み - 1月 1987 |
外部発表 | はい |
!!!All Science Journal Classification (ASJC) codes
- 工学(全般)
- 物理学および天文学(全般)