Formation of ohmic contacts to n-GaAs by solid phase epitaxy of evaporated and ion implanted Ge films

Tsuyoshi Fukada, Tanemasa Asano, Seijiro Frukawa, Hiroshi Ishiwara

研究成果: Contribution to journalArticle査読

4 被引用数 (Scopus)

抄録

Ge films evaporated on GaAs(100) substrates have been amorphized by ion implantation and recrystallized epitaxially in the solid phase. Ohmic characteristics have been obtained in Ge/n-GaAs heterostructures by implantation of As+ or P+ in Ge and Si+ at the interface. A two-step annealing method was found to be effective to obtain ohmic characteristics. In two-step annealing, the first annealing step at low temperature is for solid phase recrystallization of Ge films; the second step involves rapid high-temperature annealing in order to activate the implanted species. It has also been found that interdiffusion should be minimized in order to obtain good ohmic characteristics.

本文言語英語
ページ(範囲)117-121
ページ数5
ジャーナルJapanese Journal of Applied Physics
26
1 R
DOI
出版ステータス出版済み - 1 1987
外部発表はい

All Science Journal Classification (ASJC) codes

  • 工学(全般)
  • 物理学および天文学(全般)

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