Ge films evaporated on GaAs(100) substrates have been amorphized by ion implantation and recrystallized epitaxially in the solid phase. Ohmic characteristics have been obtained in Ge/n-GaAs heterostructures by implantation of As+ or P+ in Ge and Si+ at the interface. A two-step annealing method was found to be effective to obtain ohmic characteristics. In two-step annealing, the first annealing step at low temperature is for solid phase recrystallization of Ge films; the second step involves rapid high-temperature annealing in order to activate the implanted species. It has also been found that interdiffusion should be minimized in order to obtain good ohmic characteristics.
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