Formation of p-type semiconducting ultrananocrystalline diamond/hydrogenated amorphous carbon composite films by boron doping

Shinya Ohmagari, Tsuyoshi Yoshitake, Akira Nagano, Ryota Ohtani, Hiroyuki Setoyama, Eiichi Kobayashi, Takeshi Hara, Kunihito Nagayama

    研究成果: ジャーナルへの寄稿記事

    20 引用 (Scopus)

    抄録

    p-Type ultrananocrystalline diamond (UNCD)/hydrogenated amorphous carbon (a-C:H) composite films were fabricated by pulsed laser deposition using boron-doped graphite targets. Thermal analysis confirmed the occurrence of p-type conduction. The electrical conductivity increased with the doped amount of boron. An activation energy estimated from the Arrhenius plot was approximately 0.1 eV. Near-edge X-ray absorption fine structure spectra revealed that the σ*C-H peak weakened and the σ*C-B peak strengthened with an increase in the doped amount of boron. Fourier transform infrared spectroscopy showed that the sp3 C-H peak weakened with the doped amount of boron. These probably indicate that the hydrogen atoms that terminate the dangling bonds of UNCD crystallites are partially replaced with boron atoms.

    元の言語英語
    ジャーナルJapanese journal of applied physics
    49
    発行部数3 PART 1
    DOI
    出版物ステータス出版済み - 7 1 2010

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    Semiconducting diamonds
    Carbon films
    Amorphous carbon
    Composite films
    Boron
    boron
    diamonds
    Doping (additives)
    composite materials
    carbon
    Diamonds
    Atoms
    Arrhenius plots
    Dangling bonds
    X ray absorption
    Pulsed laser deposition
    Crystallites
    Thermoanalysis
    crystallites
    pulsed laser deposition

    All Science Journal Classification (ASJC) codes

    • Engineering(all)
    • Physics and Astronomy(all)

    これを引用

    Formation of p-type semiconducting ultrananocrystalline diamond/hydrogenated amorphous carbon composite films by boron doping. / Ohmagari, Shinya; Yoshitake, Tsuyoshi; Nagano, Akira; Ohtani, Ryota; Setoyama, Hiroyuki; Kobayashi, Eiichi; Hara, Takeshi; Nagayama, Kunihito.

    :: Japanese journal of applied physics, 巻 49, 番号 3 PART 1, 01.07.2010.

    研究成果: ジャーナルへの寄稿記事

    Ohmagari, Shinya ; Yoshitake, Tsuyoshi ; Nagano, Akira ; Ohtani, Ryota ; Setoyama, Hiroyuki ; Kobayashi, Eiichi ; Hara, Takeshi ; Nagayama, Kunihito. / Formation of p-type semiconducting ultrananocrystalline diamond/hydrogenated amorphous carbon composite films by boron doping. :: Japanese journal of applied physics. 2010 ; 巻 49, 番号 3 PART 1.
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    abstract = "p-Type ultrananocrystalline diamond (UNCD)/hydrogenated amorphous carbon (a-C:H) composite films were fabricated by pulsed laser deposition using boron-doped graphite targets. Thermal analysis confirmed the occurrence of p-type conduction. The electrical conductivity increased with the doped amount of boron. An activation energy estimated from the Arrhenius plot was approximately 0.1 eV. Near-edge X-ray absorption fine structure spectra revealed that the σ*C-H peak weakened and the σ*C-B peak strengthened with an increase in the doped amount of boron. Fourier transform infrared spectroscopy showed that the sp3 C-H peak weakened with the doped amount of boron. These probably indicate that the hydrogen atoms that terminate the dangling bonds of UNCD crystallites are partially replaced with boron atoms.",
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    AU - Ohmagari, Shinya

    AU - Yoshitake, Tsuyoshi

    AU - Nagano, Akira

    AU - Ohtani, Ryota

    AU - Setoyama, Hiroyuki

    AU - Kobayashi, Eiichi

    AU - Hara, Takeshi

    AU - Nagayama, Kunihito

    PY - 2010/7/1

    Y1 - 2010/7/1

    N2 - p-Type ultrananocrystalline diamond (UNCD)/hydrogenated amorphous carbon (a-C:H) composite films were fabricated by pulsed laser deposition using boron-doped graphite targets. Thermal analysis confirmed the occurrence of p-type conduction. The electrical conductivity increased with the doped amount of boron. An activation energy estimated from the Arrhenius plot was approximately 0.1 eV. Near-edge X-ray absorption fine structure spectra revealed that the σ*C-H peak weakened and the σ*C-B peak strengthened with an increase in the doped amount of boron. Fourier transform infrared spectroscopy showed that the sp3 C-H peak weakened with the doped amount of boron. These probably indicate that the hydrogen atoms that terminate the dangling bonds of UNCD crystallites are partially replaced with boron atoms.

    AB - p-Type ultrananocrystalline diamond (UNCD)/hydrogenated amorphous carbon (a-C:H) composite films were fabricated by pulsed laser deposition using boron-doped graphite targets. Thermal analysis confirmed the occurrence of p-type conduction. The electrical conductivity increased with the doped amount of boron. An activation energy estimated from the Arrhenius plot was approximately 0.1 eV. Near-edge X-ray absorption fine structure spectra revealed that the σ*C-H peak weakened and the σ*C-B peak strengthened with an increase in the doped amount of boron. Fourier transform infrared spectroscopy showed that the sp3 C-H peak weakened with the doped amount of boron. These probably indicate that the hydrogen atoms that terminate the dangling bonds of UNCD crystallites are partially replaced with boron atoms.

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