Formation of quasi-single-crystal Ge on plastic by nucleation-controlled Au-induced layer-exchange growth for flexible electronics

Jong Hyeok Park, Masanobu Miyao, Taizoh Sadoh

研究成果: 書籍/レポート タイプへの寄稿会議への寄与

2 被引用数 (Scopus)

抄録

A low-temperature (≤250oC) formation technique of orientation-controlled large-grain Ge thin films on insulator is desirable for realization of advanced flexible electronics. To achieve this, the Au-induced crystallization technique combined with inter-diffusion-control and interface-energy-modulation techniques has been investigated. Consequently, selective formation of (111)-or (100)-oriented large-grain (>20 μm) Ge crystals on insulator have been realized. Moreover, formation of (111)-oriented large-grain Ge crystals directly on plastic substrates is demonstrated. This technique facilitates realization of future flexible electronics.

本文言語英語
ホスト出版物のタイトルProceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices
ホスト出版物のサブタイトルTFT Technologies and FPD Materials
出版社IEEE Computer Society
ページ291-294
ページ数4
ISBN(印刷版)9784863483958
DOI
出版ステータス出版済み - 1月 1 2014
イベント21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2014 - Kyoto, 日本
継続期間: 7月 2 20147月 4 2014

出版物シリーズ

名前Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials

その他

その他21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2014
国/地域日本
CityKyoto
Period7/2/147/4/14

!!!All Science Journal Classification (ASJC) codes

  • ハードウェアとアーキテクチャ
  • 電子工学および電気工学

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