We have investigated formation of SiC/Si multilayers on Si(100) by supersonic free jet CVD utilizing single gas source, CH3SiH 3. The H2 diluted 10% CH3SiH3 gas was introduced into the chamber by using a pulse valve. At first, the substrate temperature was set at 850°C and a SiC layer was grown on Si(100). Then the substrate temperature was reduced to 400-600°C and a Si layer was formed using a tungsten hot filament on the SiC layer. The Si layer was amorphous at the substrate temperature of 400°C while polycrystalline Si was formed at 600°C. SiC/Si/SiC multilayer structures were successfully grown by repeating the CH3SiH3 jet exposures at 850°C and 600°C.
|ジャーナル||Materials Science Forum|
|出版ステータス||出版済み - 1 1 2004|
|イベント||Proceedings of the 10th International Conference on Silicon Carbide and Related Materials, ICSCRM 2003 - Lyon, フランス|
継続期間: 10 5 2003 → 10 10 2003
All Science Journal Classification (ASJC) codes