Formation of SiC/Si multilayer structures on Si(100) by supersonic free jets of single gas source CH3SiH3

Y. Ikoma, R. Ohtani, T. Motooka

    研究成果: Contribution to journalConference article査読

    5 被引用数 (Scopus)

    抄録

    We have investigated formation of SiC/Si multilayers on Si(100) by supersonic free jet CVD utilizing single gas source, CH3SiH 3. The H2 diluted 10% CH3SiH3 gas was introduced into the chamber by using a pulse valve. At first, the substrate temperature was set at 850°C and a SiC layer was grown on Si(100). Then the substrate temperature was reduced to 400-600°C and a Si layer was formed using a tungsten hot filament on the SiC layer. The Si layer was amorphous at the substrate temperature of 400°C while polycrystalline Si was formed at 600°C. SiC/Si/SiC multilayer structures were successfully grown by repeating the CH3SiH3 jet exposures at 850°C and 600°C.

    本文言語英語
    ページ(範囲)325-328
    ページ数4
    ジャーナルMaterials Science Forum
    457-460
    I
    出版ステータス出版済み - 1 1 2004
    イベントProceedings of the 10th International Conference on Silicon Carbide and Related Materials, ICSCRM 2003 - Lyon, フランス
    継続期間: 10 5 200310 10 2003

    All Science Journal Classification (ASJC) codes

    • 材料科学(全般)
    • 凝縮系物理学
    • 材料力学
    • 機械工学

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