Formation of SiC/Si multilayer structures on Si(100) by supersonic free jets of single gas source CH3SiH3

Y. Ikoma, R. Ohtani, T. Motooka

研究成果: Contribution to journalConference article

5 被引用数 (Scopus)

抄録

We have investigated formation of SiC/Si multilayers on Si(100) by supersonic free jet CVD utilizing single gas source, CH3SiH 3. The H2 diluted 10% CH3SiH3 gas was introduced into the chamber by using a pulse valve. At first, the substrate temperature was set at 850°C and a SiC layer was grown on Si(100). Then the substrate temperature was reduced to 400-600°C and a Si layer was formed using a tungsten hot filament on the SiC layer. The Si layer was amorphous at the substrate temperature of 400°C while polycrystalline Si was formed at 600°C. SiC/Si/SiC multilayer structures were successfully grown by repeating the CH3SiH3 jet exposures at 850°C and 600°C.

本文言語英語
ページ(範囲)325-328
ページ数4
ジャーナルMaterials Science Forum
457-460
I
出版ステータス出版済み - 1 1 2004
イベントProceedings of the 10th International Conference on Silicon Carbide and Related Materials, ICSCRM 2003 - Lyon, フランス
継続期間: 10 5 200310 10 2003

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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