Formation of silicon nanodots from dysprosium-doped amorphous SiC x O y films grown by hot-filament assisted chemical vapor deposition of CH 3 SiH 3 and Dy(DPM) 3 gas jets

Yoshifumi Ikoma, Takayoshi Masaki, Shinji Kawai, Teruaki Motooka

    研究成果: Contribution to journalArticle査読

    抄録

    We report on Si nanodot formation by chemical vapor deposition (CVD) of ultrathin films and following oxidation. The film growth was carried out by hot-filament assisted CVD of CH 3 SiH 3 and Dy(DPM) 3 gas jets at the substrate temperature of 600 °C. The transmission electron microscopy observation and X-ray photoelectron spectroscopy analysis indicated that ∼35 nm Dy-doped amorphous silicon oxycarbide (SiC x O y ) films were grown on Si(1 0 0). The Dy concentration was 10-20% throughout the film. By further oxidation at 860 °C, the smooth amorphous film was changed to a rough structure composed of crystalline Si nanodots surrounded by heavily Dy-doped SiO 2 .

    本文言語英語
    ページ(範囲)8657-8660
    ページ数4
    ジャーナルApplied Surface Science
    253
    21
    DOI
    出版ステータス出版済み - 8 31 2007

    All Science Journal Classification (ASJC) codes

    • 表面、皮膜および薄膜

    フィンガープリント

    「Formation of silicon nanodots from dysprosium-doped amorphous SiC <sub>x</sub> O <sub>y</sub> films grown by hot-filament assisted chemical vapor deposition of CH <sub>3</sub> SiH <sub>3</sub> and Dy(DPM) <sub>3</sub> gas jets」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

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