Formation of Si/SiC heterostructures on Si(100) by hot-filament-assisted CH3SiH3 gas jet chemical vapor deposition

Ryota Ohtani, Yoshifumi Ikoma, Teruaki Motooka

研究成果: ジャーナルへの寄稿記事

2 引用 (Scopus)

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We investigated the formation of Si/SiC heterostructures on Si(100) substrates by means of hot-filament-assisted molecular jet chemical vapor deposition using single gas source CH3SiH3. SiC films were epitaxially grown on Si(100) at the substrate temperature of 850°C. It was found that polycrystalline Si was successfully deposited on the SiC thin films on Si(100) at 850°C with the assistance of a tungsten hot-filament at ∼1800°C. These results imply that SiC/Si multilayer growth can be achieved by simply turning on and off the hot filament during the CH 3SiH3 jet irradiation.

元の言語英語
ページ(範囲)2514-2515
ページ数2
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
45
発行部数4 A
DOI
出版物ステータス出版済み - 4 7 2006

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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