Formation of solution-derived SiO2 thin films by CO2 laser annealing for polycrystalline silicon thin film transistors

Daisuke Hishitani, Masahiro Horita, Yasuaki Ishikawa, Yosuke Watanabe, Hiroshi Ikenoue, Yukiharu Uraoka

研究成果: 著書/レポートタイプへの貢献会議での発言

抜粋

Formation of perhydropolysilazane based SiO2 film by CO2 laser annealing was investigated. Polycrystalline silicon thin film transistors with the SiO2 film as a gate insulator were fabricated. The TFT showed the field effect mobility of 27 cm2/vs and hysteresis shift of -0.11 V. We considered the cause of the hysteresis.

元の言語英語
ホスト出版物のタイトル21st International Display Workshops 2014, IDW 2014
出版者Society for Information Display
ページ261-262
ページ数2
ISBN(電子版)9781510827790
出版物ステータス出版済み - 1 1 2014
イベント21st International Display Workshops 2014, IDW 2014 - Niigata, 日本
継続期間: 12 3 201412 5 2014

出版物シリーズ

名前21st International Display Workshops 2014, IDW 2014
1

その他

その他21st International Display Workshops 2014, IDW 2014
日本
Niigata
期間12/3/1412/5/14

    フィンガープリント

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Human-Computer Interaction
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

これを引用

Hishitani, D., Horita, M., Ishikawa, Y., Watanabe, Y., Ikenoue, H., & Uraoka, Y. (2014). Formation of solution-derived SiO2 thin films by CO2 laser annealing for polycrystalline silicon thin film transistors. : 21st International Display Workshops 2014, IDW 2014 (pp. 261-262). (21st International Display Workshops 2014, IDW 2014; 巻数 1). Society for Information Display.