The channeling implantation of oxygen into n-type GaAs has been studied in order to form thick and thermally stable high-resistivity-layers. Carrier removal profiles and deep trapping levels are measured by the C-V and DLTS techniques in both oxygen- and proton-implanted layers. The C-V measurements show that the carrier removal by oxygen implantation is stable at least up to 800 degree C, and the DLTS measurements show that two trap levels exist in oxygen-implanted layers after annealing at 800 degree C while only one level is observable in unimplanted and proton-implanted layers. It is demonstrated that the carrier removal depth by the oxygen channeling implantation is about twice as deep as that by conventional random implantation.
|ジャーナル||Japanese Journal of Applied Physics|
|出版ステータス||出版済み - 5月 1 1981|
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