FORMATION OF THICK, THERMALLY-STABLE HIGH-RESISTIVITY-LAYERS IN GaAs BY OXYGEN ION IMPLANTATION.

Tanemasa Asano, Rosen D. Atanassov, Hiroshi Ishiwara, Seijiro Furukawa

研究成果: Contribution to journalArticle査読

抄録

The channeling implantation of oxygen into n-type GaAs has been studied in order to form thick and thermally stable high-resistivity-layers. Carrier removal profiles and deep trapping levels are measured by the C-V and DLTS techniques in both oxygen- and proton-implanted layers. The C-V measurements show that the carrier removal by oxygen implantation is stable at least up to 800 degree C, and the DLTS measurements show that two trap levels exist in oxygen-implanted layers after annealing at 800 degree C while only one level is observable in unimplanted and proton-implanted layers. It is demonstrated that the carrier removal depth by the oxygen channeling implantation is about twice as deep as that by conventional random implantation.

本文言語英語
ページ(範囲)901-907
ページ数7
ジャーナルJapanese Journal of Applied Physics
20
5
出版ステータス出版済み - 5 1 1981
外部発表はい

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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