Formation of thick, thermally-stable high-resistivity-layers in GaAs by oxygen ion implantation

Tanemasa Asano, Rosen D. Atanassov, Hiroshi Ishiwara, Seijiro Furukawa

研究成果: ジャーナルへの寄稿記事

18 引用 (Scopus)

抄録

The channeling implantation of oxygen into n-type GaAs has been studied in order to form thick and thermally stable high-resistivity-layers. Carrier removal profiles and deep trapping levels are measured by the C-V and DLTS techniques in both oxygen- and proton-implanted layers. The C-V measurements show that the carrier removal by oxygen implantation is stable at least up to 800°C, and the DLTS measurements show that two trap levels exist in oxygen-implanted layers after annealing at 800°C while only one level is observable in unimplanted and proton-implanted layers. It is demonstrated that the carrier removal depth by the oxygen channeling implantation is about twice as deep as that by conventional random implantation.

元の言語英語
ページ(範囲)901-907
ページ数7
ジャーナルJapanese Journal of Applied Physics
20
発行部数5
DOI
出版物ステータス出版済み - 1 1 1981

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oxygen ions
Ion implantation
ion implantation
implantation
electrical resistivity
Oxygen
oxygen
Deep level transient spectroscopy
Protons
protons
trapping
traps
Annealing
annealing
profiles

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

これを引用

Formation of thick, thermally-stable high-resistivity-layers in GaAs by oxygen ion implantation. / Asano, Tanemasa; Atanassov, Rosen D.; Ishiwara, Hiroshi; Furukawa, Seijiro.

:: Japanese Journal of Applied Physics, 巻 20, 番号 5, 01.01.1981, p. 901-907.

研究成果: ジャーナルへの寄稿記事

Asano, Tanemasa ; Atanassov, Rosen D. ; Ishiwara, Hiroshi ; Furukawa, Seijiro. / Formation of thick, thermally-stable high-resistivity-layers in GaAs by oxygen ion implantation. :: Japanese Journal of Applied Physics. 1981 ; 巻 20, 番号 5. pp. 901-907.
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