Forming of SiO2 film by spin-on glass and CO2 laser annealing for gate insulator of polycrystalline silicon thin film transistors

Daisuke Hishitani, Masahiro Horita, Yasuaki Ishikawa, Hiroshi Ikenoue, Yosuke Watanabe, Yukiharu Uraoka

研究成果: 書籍/レポート タイプへの寄稿会議への寄与

抄録

CO2 laser was irradiated to per-hydro-polysilazane by us. Per-hydro-polysilazane as SiO2 precursor was spin-coated on the polycrystalline silicon substrate. CO2 laser was irradiated after prebaking Per-hydro-polysilazane film. Atomic force microscope analysis showed that the film after CO2 laser irradiation was formed flatly. Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy and secondary ion mass spectrometry analysis showed that uniform SiO2 film in the depth direction was obtained by CO2 Laser Annealing compared with conventional furnace annealing.

本文言語英語
ホスト出版物のタイトルIMFEDK 2013 - 2013 International Meeting for Future of Electron Devices, Kansai
ページ126-127
ページ数2
DOI
出版ステータス出版済み - 10月 21 2013
イベント2013 11th International Meeting for Future of Electron Devices, Kansai, IMFEDK 2013 - Osaka, 日本
継続期間: 6月 5 20136月 6 2013

出版物シリーズ

名前IMFEDK 2013 - 2013 International Meeting for Future of Electron Devices, Kansai

その他

その他2013 11th International Meeting for Future of Electron Devices, Kansai, IMFEDK 2013
国/地域日本
CityOsaka
Period6/5/136/6/13

!!!All Science Journal Classification (ASJC) codes

  • 電子工学および電気工学

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