Formulation of gas diffusion dynamics for thin film semiconductor gas sensor based on simple reaction-diffusion equation

Naoki Matsunaga, Go Sakai, Kengo Shimanoe, Noboru Yamazoe

研究成果: ジャーナルへの寄稿記事

67 引用 (Scopus)

抄録

In response and recovery steps of a thin film semiconductor gas sensor, target gas molecules diffuse in and out of the thin film. The gas diffusion dynamics taking place in these steps have been formulated based on a simple reaction-diffusion equation assuming a first-order reaction of target gas. In order to facilitate mathematical treatments, the actual thin film device was replaced by an equivalent model, for which boundary conditions could be set properly. With this model, the reaction-diffusion equation could be solved by using the methods of Fourier expansion and separation of variables. The solutions given as a function of diffusion coefficient D, rate constant k, film thickness L, depth x and time t, are shown to express well how target gas concentration profile in the thin film develops or vanishes in the response or recovery step, respectively.

元の言語英語
ページ(範囲)226-233
ページ数8
ジャーナルSensors and Actuators, B: Chemical
96
発行部数1-2
DOI
出版物ステータス出版済み - 11 15 2003

Fingerprint

reaction-diffusion equations
gaseous diffusion
Diffusion in gases
Chemical sensors
Gases
Semiconductor materials
formulations
Thin films
sensors
thin films
gases
Thin film devices
Recovery
recovery
Film thickness
Rate constants
Boundary conditions
Molecules
film thickness
diffusion coefficient

All Science Journal Classification (ASJC) codes

  • Analytical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

これを引用

Formulation of gas diffusion dynamics for thin film semiconductor gas sensor based on simple reaction-diffusion equation. / Matsunaga, Naoki; Sakai, Go; Shimanoe, Kengo; Yamazoe, Noboru.

:: Sensors and Actuators, B: Chemical, 巻 96, 番号 1-2, 15.11.2003, p. 226-233.

研究成果: ジャーナルへの寄稿記事

@article{db98d7fb42114e85adeafb04bb1d8e3b,
title = "Formulation of gas diffusion dynamics for thin film semiconductor gas sensor based on simple reaction-diffusion equation",
abstract = "In response and recovery steps of a thin film semiconductor gas sensor, target gas molecules diffuse in and out of the thin film. The gas diffusion dynamics taking place in these steps have been formulated based on a simple reaction-diffusion equation assuming a first-order reaction of target gas. In order to facilitate mathematical treatments, the actual thin film device was replaced by an equivalent model, for which boundary conditions could be set properly. With this model, the reaction-diffusion equation could be solved by using the methods of Fourier expansion and separation of variables. The solutions given as a function of diffusion coefficient D, rate constant k, film thickness L, depth x and time t, are shown to express well how target gas concentration profile in the thin film develops or vanishes in the response or recovery step, respectively.",
author = "Naoki Matsunaga and Go Sakai and Kengo Shimanoe and Noboru Yamazoe",
year = "2003",
month = "11",
day = "15",
doi = "10.1016/S0925-4005(03)00529-X",
language = "English",
volume = "96",
pages = "226--233",
journal = "Sensors and Actuators, B: Chemical",
issn = "0925-4005",
publisher = "Elsevier",
number = "1-2",

}

TY - JOUR

T1 - Formulation of gas diffusion dynamics for thin film semiconductor gas sensor based on simple reaction-diffusion equation

AU - Matsunaga, Naoki

AU - Sakai, Go

AU - Shimanoe, Kengo

AU - Yamazoe, Noboru

PY - 2003/11/15

Y1 - 2003/11/15

N2 - In response and recovery steps of a thin film semiconductor gas sensor, target gas molecules diffuse in and out of the thin film. The gas diffusion dynamics taking place in these steps have been formulated based on a simple reaction-diffusion equation assuming a first-order reaction of target gas. In order to facilitate mathematical treatments, the actual thin film device was replaced by an equivalent model, for which boundary conditions could be set properly. With this model, the reaction-diffusion equation could be solved by using the methods of Fourier expansion and separation of variables. The solutions given as a function of diffusion coefficient D, rate constant k, film thickness L, depth x and time t, are shown to express well how target gas concentration profile in the thin film develops or vanishes in the response or recovery step, respectively.

AB - In response and recovery steps of a thin film semiconductor gas sensor, target gas molecules diffuse in and out of the thin film. The gas diffusion dynamics taking place in these steps have been formulated based on a simple reaction-diffusion equation assuming a first-order reaction of target gas. In order to facilitate mathematical treatments, the actual thin film device was replaced by an equivalent model, for which boundary conditions could be set properly. With this model, the reaction-diffusion equation could be solved by using the methods of Fourier expansion and separation of variables. The solutions given as a function of diffusion coefficient D, rate constant k, film thickness L, depth x and time t, are shown to express well how target gas concentration profile in the thin film develops or vanishes in the response or recovery step, respectively.

UR - http://www.scopus.com/inward/record.url?scp=0242657620&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0242657620&partnerID=8YFLogxK

U2 - 10.1016/S0925-4005(03)00529-X

DO - 10.1016/S0925-4005(03)00529-X

M3 - Article

AN - SCOPUS:0242657620

VL - 96

SP - 226

EP - 233

JO - Sensors and Actuators, B: Chemical

JF - Sensors and Actuators, B: Chemical

SN - 0925-4005

IS - 1-2

ER -