Fundamental Study of Saturation Output Power on Quantum Dot Semiconductor Optical Amplifier (SOA) under High Temperature (85 °c)

研究成果: 著書/レポートタイプへの貢献会議での発言

抜粋

We have studied the saturation output power of 1.3-μm wavelength quantum dot semiconductor optical amplifier (QD-SOA) under high temperature by using Fabry-Pérot laser diode structure. The saturation output power of 5 dBm has been confirmed under 85°C with a single stripe device (375 μm length).

元の言語英語
ホスト出版物のタイトルMOC 2019 - 24th Microoptics Conference
出版者Institute of Electrical and Electronics Engineers Inc.
ページ180-181
ページ数2
ISBN(電子版)9784863487123
DOI
出版物ステータス出版済み - 11 2019
イベント24th Microoptics Conference, MOC 2019 - Toyama, 日本
継続期間: 11 17 201911 20 2019

出版物シリーズ

名前MOC 2019 - 24th Microoptics Conference

会議

会議24th Microoptics Conference, MOC 2019
日本
Toyama
期間11/17/1911/20/19

    フィンガープリント

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

これを引用

Kuwahata, R., Jiang, H., & Hamamoto, K. (2019). Fundamental Study of Saturation Output Power on Quantum Dot Semiconductor Optical Amplifier (SOA) under High Temperature (85 °c). : MOC 2019 - 24th Microoptics Conference (pp. 180-181). [8982763] (MOC 2019 - 24th Microoptics Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/MOC46630.2019.8982763