Furnace annealing behavior of B-doped poly-SiGe formed on insulating film

Isao Tsunoda, Taizoh Sadoh, Masanobu Miyao

研究成果: ジャーナルへの寄稿記事

抄録

Furnace-annealing behavior of B-doped poly-SiGe on insulating films has been investigated. With increasing Ge fraction, thermal stability of electrically active B atoms at a supersaturated concentration was significantly improved, for example, the stability at 800°C for poly-Si0.6Ge0.4 films was nine times as high as that for poly-Si films. The deactivation process consists of the fast and slow processes. The fast process was due to sweeping out of B atoms from substitutional to interstitial sites, enhanced by a local strain induced by the difference in atomic radii between Si and B atoms, and the slow process was due to trapping of B at grain boundaries during grain growth by annealing. The improved thermal stability of B atoms is due to the local strain compensation by Ge doping.

元の言語英語
ページ(範囲)151-154
ページ数4
ジャーナルResearch Reports on Information Science and Electrical Engineering of Kyushu University
8
発行部数2
出版物ステータス出版済み - 9 1 2003
外部発表Yes

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Furnaces
Annealing
Atoms
Thermodynamic stability
Grain growth
Polysilicon
Grain boundaries
Doping (additives)

All Science Journal Classification (ASJC) codes

  • Computer Science(all)
  • Electrical and Electronic Engineering

これを引用

Furnace annealing behavior of B-doped poly-SiGe formed on insulating film. / Tsunoda, Isao; Sadoh, Taizoh; Miyao, Masanobu.

:: Research Reports on Information Science and Electrical Engineering of Kyushu University, 巻 8, 番号 2, 01.09.2003, p. 151-154.

研究成果: ジャーナルへの寄稿記事

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