GaAs-MESFETS FABRICATED IN SOI LAYERS ON CRYSTALLINE Ca//x SR//1// minus //x F//2 INSULATOR FILMS.

K. Tsutsui, T. Asano, H. Ishiwara, S. Furukawa

研究成果: Contribution to journalConference article

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Semiconductor on insulator (SOI)-GaAs structures of GaAs/Ca//x SR//1// minus //x F//2/GaAs(100) were grown by molecular beam epitaxy, and MESFETs were fabricated in the SOI layers for the first time. The two-step growth method was effective for good electrical properties of SOI films. The g//m value of 25mS/mm was obtained for an FET with L//g equals 3. 0 mu m, though it suffered mobility degradation from antiphase disorder. Evaluation of mobility showed that suppression of antiphase disorder leads to drastic improvement of the SOI-GaAs device characteristics.

元の言語英語
ページ(範囲)755-758
ページ数4
ジャーナルTechnical Digest - International Electron Devices Meeting
出版物ステータス出版済み - 12 1 1986

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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