Semiconductor on insulator (SOI)-GaAs structures of GaAs/Ca//x SR//1// minus //x F//2/GaAs(100) were grown by molecular beam epitaxy, and MESFETs were fabricated in the SOI layers for the first time. The two-step growth method was effective for good electrical properties of SOI films. The g//m value of 25mS/mm was obtained for an FET with L//g equals 3. 0 mu m, though it suffered mobility degradation from antiphase disorder. Evaluation of mobility showed that suppression of antiphase disorder leads to drastic improvement of the SOI-GaAs device characteristics.
|ジャーナル||Technical Digest - International Electron Devices Meeting|
|出版ステータス||出版済み - 12月 1 1986|
!!!All Science Journal Classification (ASJC) codes