Gallium nitride power HEMT for high switching frequency power electronics

Ichiro Omura, Wataru Saito, Tomokazu Domon, Kunio Tsuda

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

34 被引用数 (Scopus)

抄録

Very large number of power semiconductor devices (semiconductor power switches) are used in power electronics systems such as AC-DC converter for PCs, DC-DC converters for CPU, motor driver systems and induction heating systems for home appliances, and GaN device is one of a promising candidate for future power devices thanks to the wide band gap semiconductor material property. In GaN base device research, the GaN-HEMT structure is widely investigated than the other device structures specially in RF technology field. This structure also suits to high switching frequency power electronics applications because of the high breakdown voltage and the inherent high speed characteristics of HEMT device. This paper describes the possibility of GaN-HEMT for power electronics applications specially focused on high switching frequency applications comparing the limit of silicon devices such as MOSFETs and IGBTs, and also describes latest research result including demonstration of high switching frequency power electronics circuit.

本文言語英語
ホスト出版物のタイトルProceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD
ページ781-786
ページ数6
DOI
出版ステータス出版済み - 12 1 2007
外部発表はい
イベント14th International Workshop on the Physics of Semiconductor Devices, IWPSD - Mumbai, インド
継続期間: 12 16 200712 20 2007

出版物シリーズ

名前Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD

その他

その他14th International Workshop on the Physics of Semiconductor Devices, IWPSD
国/地域インド
CityMumbai
Period12/16/0712/20/07

All Science Journal Classification (ASJC) codes

  • 電子工学および電気工学

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