GaN growth process using GaP(1 1 1)A and (1 1 1)B surfaces as an initial substrate

Yuriko Matsuo, Nobuhiko Kawaguchi, Marie Fujino, Yoshihiro Kangawa, Yoshinao Kumagai, Irisawa Toshiharu Irisawa, Akinori Koukitu

研究成果: Contribution to journalConference article査読

1 被引用数 (Scopus)

抄録

GaN growth on GaP(1 1 1)A and (1 1 1)B surfaces are discussed using P desorption energy from the GaP(1 1 1) surfaces calculated by ab initio pseudopotential method and surface morphology of GaN layers on the GaP(1 1 1) substrates obtained by experiments. It was found that the activation energy for P desorption from GaP(1 1 1)A was smaller than that from GaP(1 1 1)B and these values depend on the surface morphology of GaN on GaP(1 1 1) surfaces. These results explain a finding that the GaP(1 1 1)A surface can promise an initial substrate for freestanding GaN substrate like GaAs(1 1 1)A surface.

本文言語英語
ページ(範囲)e1631-e1636
ジャーナルJournal of Crystal Growth
275
1-2
DOI
出版ステータス出版済み - 2 15 2005
外部発表はい

All Science Journal Classification (ASJC) codes

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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