GaN-HEMTs for high-voltage switching applications

研究成果: 書籍/レポート タイプへの寄稿会議への寄与

2 被引用数 (Scopus)

抄録

GaN HEMTs can realize high-power-density operation with low power loss in power electronic systems due to ultra low specific on-resistance below the Si-limit. The dynamic on-resistance, however, is degraded by the current collapse phenomena. The relation between the dynamic on-resistance and the maximum electric field peak showed universality, which was independent from the field plate (FP) structure and the wafer. The gate-edge electric field strongly affects the increase of the dynamic on-resistance. Yellow luminescence intensity strongly related with current collapse phenomena and can be utilized as a useful index for improving the wafer quality. High speed switching was obtained at the turn-off switching test with an inductive load. The switching speed of the GaN-HEMT can be controlled by the external gate resistance as same manner as the conventional Si-MOSFET. For the compatibility with the same loss and dV/dt, the gate resistance must be set to 10 times higher than that at the Si-MOSFET due to low Qgd.

本文言語英語
ホスト出版物のタイトルGallium Nitride and Silicon Carbide Power Technologies
出版社Electrochemical Society Inc.
ページ43-49
ページ数7
8
ISBN(電子版)9781607682622
ISBN(印刷版)9781566779081
DOI
出版ステータス出版済み - 2011
外部発表はい
イベントGallium Nitride and Silicon Carbide Power Technologies - 220th ECS Meeting - Boston, MA, 米国
継続期間: 10月 9 201110月 14 2011

出版物シリーズ

名前ECS Transactions
番号8
41
ISSN(印刷版)1938-5862
ISSN(電子版)1938-6737

会議

会議Gallium Nitride and Silicon Carbide Power Technologies - 220th ECS Meeting
国/地域米国
CityBoston, MA
Period10/9/1110/14/11

!!!All Science Journal Classification (ASJC) codes

  • 工学(全般)

フィンガープリント

「GaN-HEMTs for high-voltage switching applications」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル