抄録
The fabrication and evaluation of a UV light-emitting diode (LED) incorporating GaN quantum dots as the active layer is demonstrated. The GaN quantum dots were fabricated on an AlxGa1-xN (x∼0.1) surface using Si as an antisurfactant. Exposing the AlxGa 1-xN surface to the Si antisurfactant prior to GaN growth enabled the formation of quantum dots on a surface where growth by the Stranski-Krastanov mode would not be possible. A fairly high density of dots (10 10-1011 cm-2) with controllable dot sizes was achieved. Room temperature luminescence at 360 nm was clearly observed during current injection (cw) into an LED structure including the GaN quantum dots. The origin of the electroluminescence is discussed by comparing it to photoluminescence measurements.
| 元の言語 | 英語 |
|---|---|
| ページ（範囲） | 11-16 |
| ページ数 | 6 |
| ジャーナル | Materials Research Society Symposium - Proceedings |
| 巻 | 798 |
| 出版物ステータス | 出版済み - 2003 |
| 外部発表 | Yes |
Fingerprint
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
これを引用
GaN quantum dot UV light emitting diode. / Lee, Jeong Sik; Satoru, Tanaka; Ramvall, Peter; Okagawa, Hiroaki.
：: Materials Research Society Symposium - Proceedings, 巻 798, 2003, p. 11-16.研究成果: ジャーナルへの寄稿 › 記事
}
TY - JOUR
T1 - GaN quantum dot UV light emitting diode
AU - Lee, Jeong Sik
AU - Satoru, Tanaka
AU - Ramvall, Peter
AU - Okagawa, Hiroaki
PY - 2003
Y1 - 2003
N2 - The fabrication and evaluation of a UV light-emitting diode (LED) incorporating GaN quantum dots as the active layer is demonstrated. The GaN quantum dots were fabricated on an AlxGa1-xN (x∼0.1) surface using Si as an antisurfactant. Exposing the AlxGa 1-xN surface to the Si antisurfactant prior to GaN growth enabled the formation of quantum dots on a surface where growth by the Stranski-Krastanov mode would not be possible. A fairly high density of dots (10 10-1011 cm-2) with controllable dot sizes was achieved. Room temperature luminescence at 360 nm was clearly observed during current injection (cw) into an LED structure including the GaN quantum dots. The origin of the electroluminescence is discussed by comparing it to photoluminescence measurements.
AB - The fabrication and evaluation of a UV light-emitting diode (LED) incorporating GaN quantum dots as the active layer is demonstrated. The GaN quantum dots were fabricated on an AlxGa1-xN (x∼0.1) surface using Si as an antisurfactant. Exposing the AlxGa 1-xN surface to the Si antisurfactant prior to GaN growth enabled the formation of quantum dots on a surface where growth by the Stranski-Krastanov mode would not be possible. A fairly high density of dots (10 10-1011 cm-2) with controllable dot sizes was achieved. Room temperature luminescence at 360 nm was clearly observed during current injection (cw) into an LED structure including the GaN quantum dots. The origin of the electroluminescence is discussed by comparing it to photoluminescence measurements.
UR - http://www.scopus.com/inward/record.url?scp=2942650723&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=2942650723&partnerID=8YFLogxK
M3 - Article
VL - 798
SP - 11
EP - 16
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
SN - 0272-9172
ER -