GaN quantum dot UV light emitting diode

Jeong Sik Lee, Satoru Tanaka, Peter Ramvall, Hiroaki Okagawa

研究成果: ジャーナルへの寄稿会議記事査読

1 被引用数 (Scopus)

抄録

The fabrication and evaluation of a UV light-emitting diode (LED) incorporating GaN quantum dots as the active layer is demonstrated. The GaN quantum dots were fabricated on an AlxGa1-xN (x∼0.1) surface using Si as an antisurfactant. Exposing the AlxGa 1-xN surface to the Si antisurfactant prior to GaN growth enabled the formation of quantum dots on a surface where growth by the Stranski-Krastanov mode would not be possible. A fairly high density of dots (10 10-1011 cm-2) with controllable dot sizes was achieved. Room temperature luminescence at 360 nm was clearly observed during current injection (cw) into an LED structure including the GaN quantum dots. The origin of the electroluminescence is discussed by comparing it to photoluminescence measurements.

本文言語英語
ページ(範囲)11-16
ページ数6
ジャーナルMaterials Research Society Symposium - Proceedings
798
DOI
出版ステータス出版済み - 2003
外部発表はい
イベントGaN and Related Alloys - 2003 - Boston, MA, 米国
継続期間: 12月 1 200312月 5 2003

!!!All Science Journal Classification (ASJC) codes

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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