GaN quantum dot UV light emitting diode

Jeong Sik Lee, Tanaka Satoru, Peter Ramvall, Hiroaki Okagawa

研究成果: ジャーナルへの寄稿記事

1 引用 (Scopus)

抄録

The fabrication and evaluation of a UV light-emitting diode (LED) incorporating GaN quantum dots as the active layer is demonstrated. The GaN quantum dots were fabricated on an AlxGa1-xN (x∼0.1) surface using Si as an antisurfactant. Exposing the AlxGa 1-xN surface to the Si antisurfactant prior to GaN growth enabled the formation of quantum dots on a surface where growth by the Stranski-Krastanov mode would not be possible. A fairly high density of dots (10 10-1011 cm-2) with controllable dot sizes was achieved. Room temperature luminescence at 360 nm was clearly observed during current injection (cw) into an LED structure including the GaN quantum dots. The origin of the electroluminescence is discussed by comparing it to photoluminescence measurements.

元の言語英語
ページ(範囲)11-16
ページ数6
ジャーナルMaterials Research Society Symposium - Proceedings
798
出版物ステータス出版済み - 2003
外部発表Yes

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Ultraviolet radiation
Semiconductor quantum dots
Diodes
light emitting diodes
quantum dots
Electroluminescence
electroluminescence
Light emitting diodes
Luminescence
Photoluminescence
luminescence
injection
photoluminescence
Fabrication
fabrication
evaluation
room temperature
Temperature

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

これを引用

GaN quantum dot UV light emitting diode. / Lee, Jeong Sik; Satoru, Tanaka; Ramvall, Peter; Okagawa, Hiroaki.

:: Materials Research Society Symposium - Proceedings, 巻 798, 2003, p. 11-16.

研究成果: ジャーナルへの寄稿記事

Lee, Jeong Sik ; Satoru, Tanaka ; Ramvall, Peter ; Okagawa, Hiroaki. / GaN quantum dot UV light emitting diode. :: Materials Research Society Symposium - Proceedings. 2003 ; 巻 798. pp. 11-16.
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