GaN quantum dots in AlxGa1-xN confined layer structures

Tanaka Satoru, H. Hirayama, S. Iwai, Y. Aoyagi

研究成果: ジャーナルへの寄稿Conference article

4 引用 (Scopus)

抄録

Nanoscale GaN quantum dots were fabricated in AlxGa1-xN confined layer structures via metallorganic chemical vapor deposition (MOCVD)), by using a 'surfactant' which can modify the GaN growth mode on AlGaN surfaces. A two dimensional growth mode (step-flow-like) of GaN films on AlxGa1-xN (x = 0 ≈ 0.2) surfaces, that is energetically commenced under the conventional growth conditions, was intentionally changed into a three dimensional mode by adding tetraethyl-silane (TESi) used as a surfactant onto the AlGaN substrate surface prior to the GaN deposition. The surfactant is believed to inhibit the GaN film from wetting the AlGaN surface due to the change in surface free energy. The resulting morphological structures of GaN dots were found to be sensitive to; the doping rate of TESi, the Al content (x) of the AlxGa1-xN layer, and the growth temperature. A very intense photoluminescence (PL) emission was observed from the GaN dots embedded in the AlGaN layers. The quantum size effect in terms of the blue-shift in a PL peak position was verified using the GaN dot samples having different dot sizes.

元の言語英語
ページ(範囲)135-140
ページ数6
ジャーナルMaterials Research Society Symposium - Proceedings
449
出版物ステータス出版済み - 1 1 1997
外部発表Yes
イベントProceedings of the 1996 MRS Fall Symposium - Boston, MA, USA
継続期間: 12 2 199612 5 1996

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Semiconductor quantum dots
quantum dots
Surface-Active Agents
Silanes
Surface active agents
surfactants
silanes
Photoluminescence
photoluminescence
Metallorganic chemical vapor deposition
Growth temperature
blue shift
Free energy
wetting
Wetting
free energy
Doping (additives)
vapor deposition
aluminum gallium nitride
Substrates

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

これを引用

GaN quantum dots in AlxGa1-xN confined layer structures. / Satoru, Tanaka; Hirayama, H.; Iwai, S.; Aoyagi, Y.

:: Materials Research Society Symposium - Proceedings, 巻 449, 01.01.1997, p. 135-140.

研究成果: ジャーナルへの寄稿Conference article

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abstract = "Nanoscale GaN quantum dots were fabricated in AlxGa1-xN confined layer structures via metallorganic chemical vapor deposition (MOCVD)), by using a 'surfactant' which can modify the GaN growth mode on AlGaN surfaces. A two dimensional growth mode (step-flow-like) of GaN films on AlxGa1-xN (x = 0 ≈ 0.2) surfaces, that is energetically commenced under the conventional growth conditions, was intentionally changed into a three dimensional mode by adding tetraethyl-silane (TESi) used as a surfactant onto the AlGaN substrate surface prior to the GaN deposition. The surfactant is believed to inhibit the GaN film from wetting the AlGaN surface due to the change in surface free energy. The resulting morphological structures of GaN dots were found to be sensitive to; the doping rate of TESi, the Al content (x) of the AlxGa1-xN layer, and the growth temperature. A very intense photoluminescence (PL) emission was observed from the GaN dots embedded in the AlGaN layers. The quantum size effect in terms of the blue-shift in a PL peak position was verified using the GaN dot samples having different dot sizes.",
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AU - Hirayama, H.

AU - Iwai, S.

AU - Aoyagi, Y.

PY - 1997/1/1

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N2 - Nanoscale GaN quantum dots were fabricated in AlxGa1-xN confined layer structures via metallorganic chemical vapor deposition (MOCVD)), by using a 'surfactant' which can modify the GaN growth mode on AlGaN surfaces. A two dimensional growth mode (step-flow-like) of GaN films on AlxGa1-xN (x = 0 ≈ 0.2) surfaces, that is energetically commenced under the conventional growth conditions, was intentionally changed into a three dimensional mode by adding tetraethyl-silane (TESi) used as a surfactant onto the AlGaN substrate surface prior to the GaN deposition. The surfactant is believed to inhibit the GaN film from wetting the AlGaN surface due to the change in surface free energy. The resulting morphological structures of GaN dots were found to be sensitive to; the doping rate of TESi, the Al content (x) of the AlxGa1-xN layer, and the growth temperature. A very intense photoluminescence (PL) emission was observed from the GaN dots embedded in the AlGaN layers. The quantum size effect in terms of the blue-shift in a PL peak position was verified using the GaN dot samples having different dot sizes.

AB - Nanoscale GaN quantum dots were fabricated in AlxGa1-xN confined layer structures via metallorganic chemical vapor deposition (MOCVD)), by using a 'surfactant' which can modify the GaN growth mode on AlGaN surfaces. A two dimensional growth mode (step-flow-like) of GaN films on AlxGa1-xN (x = 0 ≈ 0.2) surfaces, that is energetically commenced under the conventional growth conditions, was intentionally changed into a three dimensional mode by adding tetraethyl-silane (TESi) used as a surfactant onto the AlGaN substrate surface prior to the GaN deposition. The surfactant is believed to inhibit the GaN film from wetting the AlGaN surface due to the change in surface free energy. The resulting morphological structures of GaN dots were found to be sensitive to; the doping rate of TESi, the Al content (x) of the AlxGa1-xN layer, and the growth temperature. A very intense photoluminescence (PL) emission was observed from the GaN dots embedded in the AlGaN layers. The quantum size effect in terms of the blue-shift in a PL peak position was verified using the GaN dot samples having different dot sizes.

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