GaN quantum structures with fractional dimension -from quantum well to quantum dot

Tanaka Satoru, I. Suemune, P. Ramvall, Y. Aoyagi

研究成果: ジャーナルへの寄稿記事

15 引用 (Scopus)

抄録

GaN quantum structures with various fractional dimensions were fabricated on AlxGa1-xN surfaces. The AlxGa1-xN surface was treated with a Si antisurfactant prior to the GaN deposition. This treatment was found to be effective in modifying the structural dimensions of the thin GaN layer. Without Si a GaN quantum well structure having a dimensionality of two was achieved in step flow growth mode. As the deposited amount of Si was increased, a morphological transition from quantum well (2D) to quantum dot (0D-like) occurred. At some Si doses the resulting structures possessed fractional dimensions. We observed that GaN quantum structures with various fractional dimensions could be controllably fabricated solely by varying the total amount of the deposited Si antisurfactant. A model concerning masking by Si-N bondings is introduced to explain the morphological transitions.

元の言語英語
ページ(範囲)431-434
ページ数4
ジャーナルPhysica Status Solidi (B) Basic Research
216
発行部数1
DOI
出版物ステータス出版済み - 1 1 1999
外部発表Yes

Fingerprint

Semiconductor quantum wells
Semiconductor quantum dots
quantum dots
quantum wells
masking
dosage

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

これを引用

GaN quantum structures with fractional dimension -from quantum well to quantum dot. / Satoru, Tanaka; Suemune, I.; Ramvall, P.; Aoyagi, Y.

:: Physica Status Solidi (B) Basic Research, 巻 216, 番号 1, 01.01.1999, p. 431-434.

研究成果: ジャーナルへの寄稿記事

Satoru, Tanaka ; Suemune, I. ; Ramvall, P. ; Aoyagi, Y. / GaN quantum structures with fractional dimension -from quantum well to quantum dot. :: Physica Status Solidi (B) Basic Research. 1999 ; 巻 216, 番号 1. pp. 431-434.
@article{84a8ce5f12f3448aaba09afe8a72b302,
title = "GaN quantum structures with fractional dimension -from quantum well to quantum dot",
abstract = "GaN quantum structures with various fractional dimensions were fabricated on AlxGa1-xN surfaces. The AlxGa1-xN surface was treated with a Si antisurfactant prior to the GaN deposition. This treatment was found to be effective in modifying the structural dimensions of the thin GaN layer. Without Si a GaN quantum well structure having a dimensionality of two was achieved in step flow growth mode. As the deposited amount of Si was increased, a morphological transition from quantum well (2D) to quantum dot (0D-like) occurred. At some Si doses the resulting structures possessed fractional dimensions. We observed that GaN quantum structures with various fractional dimensions could be controllably fabricated solely by varying the total amount of the deposited Si antisurfactant. A model concerning masking by Si-N bondings is introduced to explain the morphological transitions.",
author = "Tanaka Satoru and I. Suemune and P. Ramvall and Y. Aoyagi",
year = "1999",
month = "1",
day = "1",
doi = "10.1002/(SICI)1521-3951(199911)216:1<431::AID-PSSB431>3.0.CO;2-3",
language = "English",
volume = "216",
pages = "431--434",
journal = "Physica Status Solidi (B): Basic Research",
issn = "0370-1972",
publisher = "Wiley-VCH Verlag",
number = "1",

}

TY - JOUR

T1 - GaN quantum structures with fractional dimension -from quantum well to quantum dot

AU - Satoru, Tanaka

AU - Suemune, I.

AU - Ramvall, P.

AU - Aoyagi, Y.

PY - 1999/1/1

Y1 - 1999/1/1

N2 - GaN quantum structures with various fractional dimensions were fabricated on AlxGa1-xN surfaces. The AlxGa1-xN surface was treated with a Si antisurfactant prior to the GaN deposition. This treatment was found to be effective in modifying the structural dimensions of the thin GaN layer. Without Si a GaN quantum well structure having a dimensionality of two was achieved in step flow growth mode. As the deposited amount of Si was increased, a morphological transition from quantum well (2D) to quantum dot (0D-like) occurred. At some Si doses the resulting structures possessed fractional dimensions. We observed that GaN quantum structures with various fractional dimensions could be controllably fabricated solely by varying the total amount of the deposited Si antisurfactant. A model concerning masking by Si-N bondings is introduced to explain the morphological transitions.

AB - GaN quantum structures with various fractional dimensions were fabricated on AlxGa1-xN surfaces. The AlxGa1-xN surface was treated with a Si antisurfactant prior to the GaN deposition. This treatment was found to be effective in modifying the structural dimensions of the thin GaN layer. Without Si a GaN quantum well structure having a dimensionality of two was achieved in step flow growth mode. As the deposited amount of Si was increased, a morphological transition from quantum well (2D) to quantum dot (0D-like) occurred. At some Si doses the resulting structures possessed fractional dimensions. We observed that GaN quantum structures with various fractional dimensions could be controllably fabricated solely by varying the total amount of the deposited Si antisurfactant. A model concerning masking by Si-N bondings is introduced to explain the morphological transitions.

UR - http://www.scopus.com/inward/record.url?scp=0033242972&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033242972&partnerID=8YFLogxK

U2 - 10.1002/(SICI)1521-3951(199911)216:1<431::AID-PSSB431>3.0.CO;2-3

DO - 10.1002/(SICI)1521-3951(199911)216:1<431::AID-PSSB431>3.0.CO;2-3

M3 - Article

AN - SCOPUS:0033242972

VL - 216

SP - 431

EP - 434

JO - Physica Status Solidi (B): Basic Research

JF - Physica Status Solidi (B): Basic Research

SN - 0370-1972

IS - 1

ER -