GaN quantum structures with fractional dimension -from quantum well to quantum dot

S. Tanaka, I. Suemune, P. Ramvall, Y. Aoyagi

研究成果: ジャーナルへの寄稿学術誌査読

16 被引用数 (Scopus)

抄録

GaN quantum structures with various fractional dimensions were fabricated on AlxGa1-xN surfaces. The AlxGa1-xN surface was treated with a Si antisurfactant prior to the GaN deposition. This treatment was found to be effective in modifying the structural dimensions of the thin GaN layer. Without Si a GaN quantum well structure having a dimensionality of two was achieved in step flow growth mode. As the deposited amount of Si was increased, a morphological transition from quantum well (2D) to quantum dot (0D-like) occurred. At some Si doses the resulting structures possessed fractional dimensions. We observed that GaN quantum structures with various fractional dimensions could be controllably fabricated solely by varying the total amount of the deposited Si antisurfactant. A model concerning masking by Si-N bondings is introduced to explain the morphological transitions.

本文言語英語
ページ(範囲)431-434
ページ数4
ジャーナルPhysica Status Solidi (B) Basic Research
216
1
DOI
出版ステータス出版済み - 11月 1999
外部発表はい

!!!All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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