抄録
GaN quantum structures with various fractional dimensions were fabricated on AlxGa1-xN surfaces. The AlxGa1-xN surface was treated with a Si antisurfactant prior to the GaN deposition. This treatment was found to be effective in modifying the structural dimensions of the thin GaN layer. Without Si a GaN quantum well structure having a dimensionality of two was achieved in step flow growth mode. As the deposited amount of Si was increased, a morphological transition from quantum well (2D) to quantum dot (0D-like) occurred. At some Si doses the resulting structures possessed fractional dimensions. We observed that GaN quantum structures with various fractional dimensions could be controllably fabricated solely by varying the total amount of the deposited Si antisurfactant. A model concerning masking by Si-N bondings is introduced to explain the morphological transitions.
| 元の言語 | 英語 |
|---|---|
| ページ（範囲） | 431-434 |
| ページ数 | 4 |
| ジャーナル | Physica Status Solidi (B) Basic Research |
| 巻 | 216 |
| 発行部数 | 1 |
| DOI | |
| 出版物ステータス | 出版済み - 1 1 1999 |
| 外部発表 | Yes |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
これを引用
GaN quantum structures with fractional dimension -from quantum well to quantum dot. / Satoru, Tanaka; Suemune, I.; Ramvall, P.; Aoyagi, Y.
：: Physica Status Solidi (B) Basic Research, 巻 216, 番号 1, 01.01.1999, p. 431-434.研究成果: ジャーナルへの寄稿 › 記事
}
TY - JOUR
T1 - GaN quantum structures with fractional dimension -from quantum well to quantum dot
AU - Satoru, Tanaka
AU - Suemune, I.
AU - Ramvall, P.
AU - Aoyagi, Y.
PY - 1999/1/1
Y1 - 1999/1/1
N2 - GaN quantum structures with various fractional dimensions were fabricated on AlxGa1-xN surfaces. The AlxGa1-xN surface was treated with a Si antisurfactant prior to the GaN deposition. This treatment was found to be effective in modifying the structural dimensions of the thin GaN layer. Without Si a GaN quantum well structure having a dimensionality of two was achieved in step flow growth mode. As the deposited amount of Si was increased, a morphological transition from quantum well (2D) to quantum dot (0D-like) occurred. At some Si doses the resulting structures possessed fractional dimensions. We observed that GaN quantum structures with various fractional dimensions could be controllably fabricated solely by varying the total amount of the deposited Si antisurfactant. A model concerning masking by Si-N bondings is introduced to explain the morphological transitions.
AB - GaN quantum structures with various fractional dimensions were fabricated on AlxGa1-xN surfaces. The AlxGa1-xN surface was treated with a Si antisurfactant prior to the GaN deposition. This treatment was found to be effective in modifying the structural dimensions of the thin GaN layer. Without Si a GaN quantum well structure having a dimensionality of two was achieved in step flow growth mode. As the deposited amount of Si was increased, a morphological transition from quantum well (2D) to quantum dot (0D-like) occurred. At some Si doses the resulting structures possessed fractional dimensions. We observed that GaN quantum structures with various fractional dimensions could be controllably fabricated solely by varying the total amount of the deposited Si antisurfactant. A model concerning masking by Si-N bondings is introduced to explain the morphological transitions.
UR - http://www.scopus.com/inward/record.url?scp=0033242972&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0033242972&partnerID=8YFLogxK
U2 - 10.1002/(SICI)1521-3951(199911)216:1<431::AID-PSSB431>3.0.CO;2-3
DO - 10.1002/(SICI)1521-3951(199911)216:1<431::AID-PSSB431>3.0.CO;2-3
M3 - Article
AN - SCOPUS:0033242972
VL - 216
SP - 431
EP - 434
JO - Physica Status Solidi (B): Basic Research
JF - Physica Status Solidi (B): Basic Research
SN - 0370-1972
IS - 1
ER -