Kinetic calculations of the chemical phenomena occurring in the epitaxial growth of silicon carbide are performed in this study. The main process parameters analyzed are precursor types, growth temperature, Cl/Si ratio, and precursors' concentration. The analysis of the gas-phase reactions resulted in a model which could explain most of the already reported experimental results, performed in horizontal hot-wall reactors. The effect of using different carbon or silicon precursors is discussed, by comparing the gas-phase composition and the resulting C/Si ratio inside the hot reaction chamber. Chlorinated molecules with three chlorine atoms seem to be the most efficient and resulting in a uniform C/Si ratio along the susceptor coordinate. Further complexity in the process derives from the use of low temperatures, which affects not only the gas-phase composition but also the risk of gas-phase nucleation. The Cl/Si ratio is demonstrated to be crucial not only for the prevention of silicon clusters but also for the uniformity of the gas-phase composition.
All Science Journal Classification (ASJC) codes
- 化学 (全般)