Gas Response of Oxide Semiconductor Film Devices under Control of Diffusion and Reaction Effects

Noboru Yamazoe, Kengo Shimanoe

研究成果: ジャーナルへの寄稿Conference article

1 引用 (Scopus)

抄録

Sensor response of film semiconductor gas sensors to reducing gas under control of diffusion and reaction effects can be formulated as a function of film thickness and Hatta number based on recent theory of the receptor function of small crystals. The bell shaped dependence of the response on temperature can also be derived theoretically.

元の言語英語
ページ(範囲)658-661
ページ数4
ジャーナルProcedia Chemistry
1
発行部数1
DOI
出版物ステータス出版済み - 9 1 2009
イベントEurosensors 23rd Conference - Lausanne, スイス
継続期間: 9 6 20099 9 2009

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Chemical sensors
Film thickness
Gases
Semiconductor materials
Crystals
Sensors
Temperature
Oxide semiconductors

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Chemical Engineering(all)

これを引用

Gas Response of Oxide Semiconductor Film Devices under Control of Diffusion and Reaction Effects. / Yamazoe, Noboru; Shimanoe, Kengo.

:: Procedia Chemistry, 巻 1, 番号 1, 01.09.2009, p. 658-661.

研究成果: ジャーナルへの寄稿Conference article

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