Gas sensing properties of C -axis-oriented Al-incorporated ZnO films epitaxially grown on (112-0) sapphire substrates using pulsed laser deposition

Yutaka Adachi, Ken Watanabe, Noriko Saito, Isao Sakaguchi, Taku T. Suzuki

研究成果: Contribution to journalArticle査読

5 被引用数 (Scopus)

抄録

Al-incorporated ZnO films with various Al concentrations were prepared using pulsed laser deposition on the (112-0) face of sapphire substrates, and their gas sensing properties were evaluated. The use of c-axis-oriented epitaxial films with the same thickness suppressed the influence of the surface-to-volume ratio and surface atomic arrangements on the sensing properties, clarifying the role of Al doping in the improvement of ZnO gas sensors. The results of ethanol gas sensing measurements indicated that Al doping significantly improved the sensing response and response time of the ZnO gas sensors. The formation of Al-related impurity phases and/or non-equilibrium defects induced by Al doping improved the sensing performance. On the other hand, changes in the grain size did not significantly affect the sensing response.

本文言語英語
ページ(範囲)668-672
ページ数5
ジャーナルJournal of the Ceramic Society of Japan
124
6
DOI
出版ステータス出版済み - 6 2016

All Science Journal Classification (ASJC) codes

  • セラミックおよび複合材料
  • 化学 (全般)
  • 凝縮系物理学
  • 材料化学

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