Gas sensing properties of indium oxide thin film on silicon substrate prepared by spin-coating method

Wan Young Chung, Go Sakai, Kengo Shimanoe, Norio Miura, Duk Dong Lee, Noboru Yamazoe

研究成果: ジャーナルへの寄稿記事

8 引用 (Scopus)

抄録

Thin films of indium oxide were prepared on a silicon substrate by a spin-coating method using a coating solution dissolving In(OH)3, acetic acid and ammonium carboxymethyl cellulose. The films consisted of a dense stack of fairly uniform grains, adhering well to the substrate, as observed with atomic force microscopy (AFM) and scanning electron microscopy (SEM). The film thickness was well controlled by repeating the spin-coating. The sensing properties of the In2O3 film to CO, H2 and C3H8 depended on the film thickness and temperature, fairly good sensing performance to CO being achieved with a 140-nm-thick film at 350°C. The contact between platinum electrode and In2O3 in these devices was found to be slightly non-Ohmic, unlike that in the sintered block type device.

元の言語英語
ページ(範囲)4994-4998
ページ数5
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
37
発行部数9 A
出版物ステータス出版済み - 9 1 1998

Fingerprint

Spin coating
indium oxides
Indium
Oxide films
Film thickness
coating
Thin films
Silicon
silicon
film thickness
Substrates
thin films
Gases
gases
Thick films
Acetic acid
Platinum
Cellulose
Atomic force microscopy
acetic acid

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

これを引用

Gas sensing properties of indium oxide thin film on silicon substrate prepared by spin-coating method. / Chung, Wan Young; Sakai, Go; Shimanoe, Kengo; Miura, Norio; Lee, Duk Dong; Yamazoe, Noboru.

:: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 巻 37, 番号 9 A, 01.09.1998, p. 4994-4998.

研究成果: ジャーナルへの寄稿記事

@article{cc484b988732418a82306b5060730722,
title = "Gas sensing properties of indium oxide thin film on silicon substrate prepared by spin-coating method",
abstract = "Thin films of indium oxide were prepared on a silicon substrate by a spin-coating method using a coating solution dissolving In(OH)3, acetic acid and ammonium carboxymethyl cellulose. The films consisted of a dense stack of fairly uniform grains, adhering well to the substrate, as observed with atomic force microscopy (AFM) and scanning electron microscopy (SEM). The film thickness was well controlled by repeating the spin-coating. The sensing properties of the In2O3 film to CO, H2 and C3H8 depended on the film thickness and temperature, fairly good sensing performance to CO being achieved with a 140-nm-thick film at 350°C. The contact between platinum electrode and In2O3 in these devices was found to be slightly non-Ohmic, unlike that in the sintered block type device.",
author = "Chung, {Wan Young} and Go Sakai and Kengo Shimanoe and Norio Miura and Lee, {Duk Dong} and Noboru Yamazoe",
year = "1998",
month = "9",
day = "1",
language = "English",
volume = "37",
pages = "4994--4998",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Institute of Physics",
number = "9 A",

}

TY - JOUR

T1 - Gas sensing properties of indium oxide thin film on silicon substrate prepared by spin-coating method

AU - Chung, Wan Young

AU - Sakai, Go

AU - Shimanoe, Kengo

AU - Miura, Norio

AU - Lee, Duk Dong

AU - Yamazoe, Noboru

PY - 1998/9/1

Y1 - 1998/9/1

N2 - Thin films of indium oxide were prepared on a silicon substrate by a spin-coating method using a coating solution dissolving In(OH)3, acetic acid and ammonium carboxymethyl cellulose. The films consisted of a dense stack of fairly uniform grains, adhering well to the substrate, as observed with atomic force microscopy (AFM) and scanning electron microscopy (SEM). The film thickness was well controlled by repeating the spin-coating. The sensing properties of the In2O3 film to CO, H2 and C3H8 depended on the film thickness and temperature, fairly good sensing performance to CO being achieved with a 140-nm-thick film at 350°C. The contact between platinum electrode and In2O3 in these devices was found to be slightly non-Ohmic, unlike that in the sintered block type device.

AB - Thin films of indium oxide were prepared on a silicon substrate by a spin-coating method using a coating solution dissolving In(OH)3, acetic acid and ammonium carboxymethyl cellulose. The films consisted of a dense stack of fairly uniform grains, adhering well to the substrate, as observed with atomic force microscopy (AFM) and scanning electron microscopy (SEM). The film thickness was well controlled by repeating the spin-coating. The sensing properties of the In2O3 film to CO, H2 and C3H8 depended on the film thickness and temperature, fairly good sensing performance to CO being achieved with a 140-nm-thick film at 350°C. The contact between platinum electrode and In2O3 in these devices was found to be slightly non-Ohmic, unlike that in the sintered block type device.

UR - http://www.scopus.com/inward/record.url?scp=0032156006&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032156006&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0032156006

VL - 37

SP - 4994

EP - 4998

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 9 A

ER -