Gas sensing properties of indium oxide thin film on silicon substrate prepared by spin-coating method

Wan Young Chung, Go Sakai, Kengo Shimanoe, Norio Miura, Duk Dong Lee, Noboru Yamazoe

研究成果: Contribution to journalArticle査読

8 被引用数 (Scopus)

抄録

Thin films of indium oxide were prepared on a silicon substrate by a spin-coating method using a coating solution dissolving In(OH)3, acetic acid and ammonium carboxymethyl cellulose. The films consisted of a dense stack of fairly uniform grains, adhering well to the substrate, as observed with atomic force microscopy (AFM) and scanning electron microscopy (SEM). The film thickness was well controlled by repeating the spin-coating. The sensing properties of the In2O3 film to CO, H2 and C3H8 depended on the film thickness and temperature, fairly good sensing performance to CO being achieved with a 140-nm-thick film at 350°C. The contact between platinum electrode and In2O3 in these devices was found to be slightly non-Ohmic, unlike that in the sintered block type device.

本文言語英語
ページ(範囲)4994-4998
ページ数5
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
37
9 A
DOI
出版ステータス出版済み - 9 1998

All Science Journal Classification (ASJC) codes

  • 工学(全般)
  • 物理学および天文学(全般)

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