Gas-source molecular beam epitaxy and luminescence characterization of strained Si1-xGex/Si quantum wells

S. Fukatsu, N. Usami, Yoshimine Kato, H. Sunamura, Y. Shiraki, H. Oku, T. Ohnishi, Y. Ohmori, K. Okumura

研究成果: ジャーナルへの寄稿記事

42 引用 (Scopus)

抄録

We describe gas-source molecular beam epitaxy (MBE) and luminescence characterization of strain Si1-xGex/Si quantum wells (QWs). Successful and reproducible growth of strained QWs is demonstrated, addressing the significance of selecting a higher growth temperature to establish a high degree of structural integrity and to maintain the crystallinity in terms of "optical" quality. Excellent heterointerface transcience was evidenced by an almost perfect match between the spectral shift due to exciton confinement and the theoretical calculation. A good spatial uniformity in terms of well width and composition was obtained when QWs are grown in the adsorption/dissociation-limited growth regime.

元の言語英語
ページ(範囲)315-321
ページ数7
ジャーナルJournal of Crystal Growth
136
発行部数1-4
DOI
出版物ステータス出版済み - 3 1 1994

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Gas source molecular beam epitaxy
Semiconductor quantum wells
Luminescence
molecular beam epitaxy
quantum wells
luminescence
gases
Growth temperature
Structural integrity
Excitons
integrity
crystallinity
excitons
dissociation
Adsorption
adsorption
shift
Chemical analysis
temperature

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

これを引用

Gas-source molecular beam epitaxy and luminescence characterization of strained Si1-xGex/Si quantum wells. / Fukatsu, S.; Usami, N.; Kato, Yoshimine; Sunamura, H.; Shiraki, Y.; Oku, H.; Ohnishi, T.; Ohmori, Y.; Okumura, K.

:: Journal of Crystal Growth, 巻 136, 番号 1-4, 01.03.1994, p. 315-321.

研究成果: ジャーナルへの寄稿記事

Fukatsu, S, Usami, N, Kato, Y, Sunamura, H, Shiraki, Y, Oku, H, Ohnishi, T, Ohmori, Y & Okumura, K 1994, 'Gas-source molecular beam epitaxy and luminescence characterization of strained Si1-xGex/Si quantum wells', Journal of Crystal Growth, 巻. 136, 番号 1-4, pp. 315-321. https://doi.org/10.1016/0022-0248(94)90432-4
Fukatsu, S. ; Usami, N. ; Kato, Yoshimine ; Sunamura, H. ; Shiraki, Y. ; Oku, H. ; Ohnishi, T. ; Ohmori, Y. ; Okumura, K. / Gas-source molecular beam epitaxy and luminescence characterization of strained Si1-xGex/Si quantum wells. :: Journal of Crystal Growth. 1994 ; 巻 136, 番号 1-4. pp. 315-321.
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AU - Fukatsu, S.

AU - Usami, N.

AU - Kato, Yoshimine

AU - Sunamura, H.

AU - Shiraki, Y.

AU - Oku, H.

AU - Ohnishi, T.

AU - Ohmori, Y.

AU - Okumura, K.

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