Gas-source molecular beam epitaxy and luminescence characterization of strained Si1-xGex/Si quantum wells

S. Fukatsu, N. Usami, Y. Kato, H. Sunamura, Y. Shiraki, H. Oku, T. Ohnishi, Y. Ohmori, K. Okumura

研究成果: Contribution to journalArticle査読

42 被引用数 (Scopus)

抄録

We describe gas-source molecular beam epitaxy (MBE) and luminescence characterization of strain Si1-xGex/Si quantum wells (QWs). Successful and reproducible growth of strained QWs is demonstrated, addressing the significance of selecting a higher growth temperature to establish a high degree of structural integrity and to maintain the crystallinity in terms of "optical" quality. Excellent heterointerface transcience was evidenced by an almost perfect match between the spectral shift due to exciton confinement and the theoretical calculation. A good spatial uniformity in terms of well width and composition was obtained when QWs are grown in the adsorption/dissociation-limited growth regime.

本文言語英語
ページ(範囲)315-321
ページ数7
ジャーナルJournal of Crystal Growth
136
1-4
DOI
出版ステータス出版済み - 3 1 1994
外部発表はい

All Science Journal Classification (ASJC) codes

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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