Gas-source molecular beam epitaxy of III-V nitrides

R. F. Davis, M. J. Paisley, Z. Sitar, D. J. Kester, K. S. Ailey, K. Linthicum, L. B. Rowland, Tanaka Satoru, R. S. Kern

研究成果: ジャーナルへの寄稿記事

23 引用 (Scopus)

抄録

Amorphous, hexagonal and cubic phases of BN were grown via ion beam assisted deposition on Si(1 0 0) substrates. Gas-source molecular beam epitaxy of the III-V nitrides is reviewed. Sapphire(0 0 0 1) is the most commonly employed substrate with 6H-SiC(0 0 0 1), ZnO(1 1 1) and Si(1 1 1) also being used primarily for the growth of wurtzite GaN(0 0 0 1) in tandem with previously deposited GaN(0 0 0 1) or AlN(0 0 0 1) buffer layers. Silicon(0 0 1), GaAs(0 0 1), GaP(0 0 1) and 3C-SiC(0 0 1) have been employed for growth of cubic (zincblende) β-GaN(0 0 1). The precursor materials are evaporated metals and reactive N species produced either via ECR or RF plasma decomposition of N2 or from ammonia. However, point defect damage from the plasma-derived species has resulted in a steady increase in the number of investigators now using ammonia. The growth temperatures for wurtzite GaN have increased from 650 ± 50°C to 800 ± 50°C to enhance the surface mobility of the reactants and, in turn, the efficiency of decomposition of ammonia and the microstructure and the growth rate of the films. Doping has been achieved primarily with Si (donor) and Mg (acceptor); the latter has been activated without post-growth annealing. Simple heterostructures, a p-n junction LED and a modulation-doped field-effect transistor have been achieved using GSMBE-grown material.

元の言語英語
ページ(範囲)87-101
ページ数15
ジャーナルJournal of Crystal Growth
178
発行部数1-2
DOI
出版物ステータス出版済み - 1 1 1997
外部発表Yes

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Gas source molecular beam epitaxy
Ammonia
Nitrides
nitrides
molecular beam epitaxy
ammonia
gases
Decomposition
Plasmas
Ion beam assisted deposition
Aluminum Oxide
wurtzite
Growth temperature
High electron mobility transistors
Silicon
Substrates
Point defects
Buffer layers
Sapphire
Light emitting diodes

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

これを引用

Davis, R. F., Paisley, M. J., Sitar, Z., Kester, D. J., Ailey, K. S., Linthicum, K., ... Kern, R. S. (1997). Gas-source molecular beam epitaxy of III-V nitrides. Journal of Crystal Growth, 178(1-2), 87-101. https://doi.org/10.1016/S0022-0248(97)00077-8

Gas-source molecular beam epitaxy of III-V nitrides. / Davis, R. F.; Paisley, M. J.; Sitar, Z.; Kester, D. J.; Ailey, K. S.; Linthicum, K.; Rowland, L. B.; Satoru, Tanaka; Kern, R. S.

:: Journal of Crystal Growth, 巻 178, 番号 1-2, 01.01.1997, p. 87-101.

研究成果: ジャーナルへの寄稿記事

Davis, RF, Paisley, MJ, Sitar, Z, Kester, DJ, Ailey, KS, Linthicum, K, Rowland, LB, Satoru, T & Kern, RS 1997, 'Gas-source molecular beam epitaxy of III-V nitrides', Journal of Crystal Growth, 巻. 178, 番号 1-2, pp. 87-101. https://doi.org/10.1016/S0022-0248(97)00077-8
Davis RF, Paisley MJ, Sitar Z, Kester DJ, Ailey KS, Linthicum K その他. Gas-source molecular beam epitaxy of III-V nitrides. Journal of Crystal Growth. 1997 1 1;178(1-2):87-101. https://doi.org/10.1016/S0022-0248(97)00077-8
Davis, R. F. ; Paisley, M. J. ; Sitar, Z. ; Kester, D. J. ; Ailey, K. S. ; Linthicum, K. ; Rowland, L. B. ; Satoru, Tanaka ; Kern, R. S. / Gas-source molecular beam epitaxy of III-V nitrides. :: Journal of Crystal Growth. 1997 ; 巻 178, 番号 1-2. pp. 87-101.
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abstract = "Amorphous, hexagonal and cubic phases of BN were grown via ion beam assisted deposition on Si(1 0 0) substrates. Gas-source molecular beam epitaxy of the III-V nitrides is reviewed. Sapphire(0 0 0 1) is the most commonly employed substrate with 6H-SiC(0 0 0 1), ZnO(1 1 1) and Si(1 1 1) also being used primarily for the growth of wurtzite GaN(0 0 0 1) in tandem with previously deposited GaN(0 0 0 1) or AlN(0 0 0 1) buffer layers. Silicon(0 0 1), GaAs(0 0 1), GaP(0 0 1) and 3C-SiC(0 0 1) have been employed for growth of cubic (zincblende) β-GaN(0 0 1). The precursor materials are evaporated metals and reactive N species produced either via ECR or RF plasma decomposition of N2 or from ammonia. However, point defect damage from the plasma-derived species has resulted in a steady increase in the number of investigators now using ammonia. The growth temperatures for wurtzite GaN have increased from 650 ± 50°C to 800 ± 50°C to enhance the surface mobility of the reactants and, in turn, the efficiency of decomposition of ammonia and the microstructure and the growth rate of the films. Doping has been achieved primarily with Si (donor) and Mg (acceptor); the latter has been activated without post-growth annealing. Simple heterostructures, a p-n junction LED and a modulation-doped field-effect transistor have been achieved using GSMBE-grown material.",
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AU - Paisley, M. J.

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AU - Kester, D. J.

AU - Ailey, K. S.

AU - Linthicum, K.

AU - Rowland, L. B.

AU - Satoru, Tanaka

AU - Kern, R. S.

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