Gas-source molecular beam epitaxy of monocrystalline β-SiC on vicinal α(6H)-SiC

L. B. Rowland, R. S. Kern, Tanaka Satoru, Robert F. Davis

研究成果: ジャーナルへの寄稿記事

26 引用 (Scopus)

抄録

Single-crystal epitaxial films of cubic /3(3C)-SiC(lll) have been deposited on hexagonal a(6H)-SiC(0001) substrates oriented 3-4° toward [1120] at 1050–1250 °C via gas-source molecular beam epitaxy using disilane (Si2H6 and ethylene (C2H4). High-resolution transmission electron microscopy revealed that the nucleation and growth of the β(3C)-SiC regions occurred primarily on terraces between closely spaced steps because of reduced rates of surface migration at the low growth temperatures. Double positioning boundaries were observed at the intersections of these regions.

元の言語英語
ページ(範囲)2753-2756
ページ数4
ジャーナルJournal of Materials Research
8
発行部数11
DOI
出版物ステータス出版済み - 1 1 1993
外部発表Yes

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Gas source molecular beam epitaxy
Epitaxial films
Growth temperature
High resolution transmission electron microscopy
Ethylene
Nucleation
molecular beam epitaxy
Single crystals
Substrates
gases
intersections
positioning
ethylene
nucleation
transmission electron microscopy
high resolution
single crystals
temperature

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

これを引用

Gas-source molecular beam epitaxy of monocrystalline β-SiC on vicinal α(6H)-SiC. / Rowland, L. B.; Kern, R. S.; Satoru, Tanaka; Davis, Robert F.

:: Journal of Materials Research, 巻 8, 番号 11, 01.01.1993, p. 2753-2756.

研究成果: ジャーナルへの寄稿記事

Rowland, L. B. ; Kern, R. S. ; Satoru, Tanaka ; Davis, Robert F. / Gas-source molecular beam epitaxy of monocrystalline β-SiC on vicinal α(6H)-SiC. :: Journal of Materials Research. 1993 ; 巻 8, 番号 11. pp. 2753-2756.
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