Gas species dependent charge build-up in reactive ion etching

Kiyoshi Arita, Tanemasa Asano

研究成果: 書籍/レポート タイプへの寄稿その他の章の寄稿

抄録

The effects of gas species on the charge build-up in reactive ion etching (RIE) have been investigated. The charge build-up was evaluated using metal/nitride/oxide/silicon (MNOS) capacitors and metal/oxide/silicon (MOS) capacitors. It was found that etching with electronegative gases such as O2 and CF4 results in considerable charge build-up. The spatial distribution of plasma parameters was diagnosed using a Langmuir probe. It was found that the spatial distribution of plasma parameters is non-uniform in plasmas of negative gases, while it is uniform in H2, He, Ar, and Xe gas plasmas. The results suggest that we must take the effect of the gas species into consideration for the nonuniformity in a plasma, which causes the significant charge build-up. Models that can be used to explain the effect of gas species are discussed. It was also found that the charge build-up can be drastically reduced by adding H2 gas to negative gases.

本文言語英語
ホスト出版物のタイトルJapanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers
編集者Y. Aoyagi, N. Atoda, T. Fukui, M. Komuro, M. Kotera, al et al
ページ6347-6695
ページ数349
35
12 B
出版ステータス出版済み - 12月 1996
イベントProceedings of the 1996 9th International MicroProcess Conference, MPC'96 - Kyushu, Jpn
継続期間: 7月 8 19967月 11 1996

その他

その他Proceedings of the 1996 9th International MicroProcess Conference, MPC'96
CityKyushu, Jpn
Period7/8/967/11/96

!!!All Science Journal Classification (ASJC) codes

  • 工学(全般)

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