Gas species dependent charge build-up in reactive ion etching

Kiyoshi Arita, Tanemasa Asano

研究成果: Chapter in Book/Report/Conference proceedingOther chapter contribution

抜粋

The effects of gas species on the charge build-up in reactive ion etching (RIE) have been investigated. The charge build-up was evaluated using metal/nitride/oxide/silicon (MNOS) capacitors and metal/oxide/silicon (MOS) capacitors. It was found that etching with electronegative gases such as O2 and CF4 results in considerable charge build-up. The spatial distribution of plasma parameters was diagnosed using a Langmuir probe. It was found that the spatial distribution of plasma parameters is non-uniform in plasmas of negative gases, while it is uniform in H2, He, Ar, and Xe gas plasmas. The results suggest that we must take the effect of the gas species into consideration for the nonuniformity in a plasma, which causes the significant charge build-up. Models that can be used to explain the effect of gas species are discussed. It was also found that the charge build-up can be drastically reduced by adding H2 gas to negative gases.

元の言語英語
ホスト出版物のタイトルJapanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers
編集者Y. Aoyagi, N. Atoda, T. Fukui, M. Komuro, M. Kotera, al et al
ページ6347-6695
ページ数349
35
エディション12 B
出版物ステータス出版済み - 12 1996
外部発表Yes
イベントProceedings of the 1996 9th International MicroProcess Conference, MPC'96 - Kyushu, Jpn
継続期間: 7 8 19967 11 1996

その他

その他Proceedings of the 1996 9th International MicroProcess Conference, MPC'96
Kyushu, Jpn
期間7/8/967/11/96

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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  • これを引用

    Arita, K., & Asano, T. (1996). Gas species dependent charge build-up in reactive ion etching. : Y. Aoyagi, N. Atoda, T. Fukui, M. Komuro, M. Kotera, & A. et al (版), Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers (12 B 版, 巻 35, pp. 6347-6695)