Gate-controlled semimetal-topological insulator transition in an InAs/GaSb heterostructure

Kyoichi Suzuki, Yuichi Harada, Koji Onomitsu, Koji Muraki

    研究成果: ジャーナルへの寄稿記事

    26 引用 (Scopus)

    抄録

    We report a gate-controlled transition of a semimetallic InAs/GaSb heterostructure to a topological insulator. The transition is induced by decreasing the degree of band inversion with front- and back-gate voltages. Temperature dependence of the longitudinal resistance peak shows the energy gap opening in the bulk region with increasing gate electric field. The suppression of bulk conduction and the transition to a topological insulator are confirmed by nonlocal resistance measurements using a dual lock-in technique, which allows us to rigorously compare the voltage distribution in the sample for different current paths without the influence of time-dependent resistance fluctuations.

    元の言語英語
    記事番号245309
    ジャーナルPhysical Review B - Condensed Matter and Materials Physics
    91
    発行部数24
    DOI
    出版物ステータス出版済み - 6 18 2015

    Fingerprint

    Metalloids
    metalloids
    Heterojunctions
    insulators
    Electric potential
    Energy gap
    Electric fields
    electric potential
    retarding
    inversions
    conduction
    temperature dependence
    electric fields
    Temperature
    indium arsenide

    All Science Journal Classification (ASJC) codes

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics

    これを引用

    Gate-controlled semimetal-topological insulator transition in an InAs/GaSb heterostructure. / Suzuki, Kyoichi; Harada, Yuichi; Onomitsu, Koji; Muraki, Koji.

    :: Physical Review B - Condensed Matter and Materials Physics, 巻 91, 番号 24, 245309, 18.06.2015.

    研究成果: ジャーナルへの寄稿記事

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    AB - We report a gate-controlled transition of a semimetallic InAs/GaSb heterostructure to a topological insulator. The transition is induced by decreasing the degree of band inversion with front- and back-gate voltages. Temperature dependence of the longitudinal resistance peak shows the energy gap opening in the bulk region with increasing gate electric field. The suppression of bulk conduction and the transition to a topological insulator are confirmed by nonlocal resistance measurements using a dual lock-in technique, which allows us to rigorously compare the voltage distribution in the sample for different current paths without the influence of time-dependent resistance fluctuations.

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