Gate-controlled semimetal-topological insulator transition in an InAs/GaSb heterostructure

Kyoichi Suzuki, Yuichi Harada, Koji Onomitsu, Koji Muraki

研究成果: ジャーナルへの寄稿記事

21 引用 (Scopus)

抄録

We report a gate-controlled transition of a semimetallic InAs/GaSb heterostructure to a topological insulator. The transition is induced by decreasing the degree of band inversion with front- and back-gate voltages. Temperature dependence of the longitudinal resistance peak shows the energy gap opening in the bulk region with increasing gate electric field. The suppression of bulk conduction and the transition to a topological insulator are confirmed by nonlocal resistance measurements using a dual lock-in technique, which allows us to rigorously compare the voltage distribution in the sample for different current paths without the influence of time-dependent resistance fluctuations.

元の言語英語
記事番号245309
ジャーナルPhysical Review B - Condensed Matter and Materials Physics
91
発行部数24
DOI
出版物ステータス出版済み - 6 18 2015
外部発表Yes

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Metalloids
metalloids
Heterojunctions
insulators
Electric potential
Energy gap
Electric fields
electric potential
retarding
inversions
conduction
temperature dependence
electric fields
Temperature
indium arsenide

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

これを引用

Gate-controlled semimetal-topological insulator transition in an InAs/GaSb heterostructure. / Suzuki, Kyoichi; Harada, Yuichi; Onomitsu, Koji; Muraki, Koji.

:: Physical Review B - Condensed Matter and Materials Physics, 巻 91, 番号 24, 245309, 18.06.2015.

研究成果: ジャーナルへの寄稿記事

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AB - We report a gate-controlled transition of a semimetallic InAs/GaSb heterostructure to a topological insulator. The transition is induced by decreasing the degree of band inversion with front- and back-gate voltages. Temperature dependence of the longitudinal resistance peak shows the energy gap opening in the bulk region with increasing gate electric field. The suppression of bulk conduction and the transition to a topological insulator are confirmed by nonlocal resistance measurements using a dual lock-in technique, which allows us to rigorously compare the voltage distribution in the sample for different current paths without the influence of time-dependent resistance fluctuations.

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