Gate operation of InAs/AlGaSb heterostructures with an atomic-layer- deposited insulating layer

Kyoichi Suzuki, Yuichi Harada, Fumihiko Maeda, Koji Onomitsu, Toru Yamaguchi, Koji Muraki

研究成果: ジャーナルへの寄稿記事

12 引用 (Scopus)

抄録

Surface treatment of the GaSb cap layer is investigated for the gate operation of InAs/AlGaSb heterostructures with an Al 2O 3 insulating layer grown by atomic layer deposition. We show that dilute HCl treatment for only 10 s effectively removes the electron trap states at the GaSb/Al 2O 3 interface and greatly improves the gate operation. In contrast, HCl treatment followed by water rinse results in adverse effects. Using an equivalent circuit model, we deduce the interface trap state density for the no-treatment case to be D it ∼ 10 13cm -2eV -1, which is reduced to well below 10 12 cm -2eV -1 by the HCl treatment. Our data also show that deep donor states in the AlGaSb barrier impede the gate operation and cause gate hysteresis.

元の言語英語
記事番号125702
ジャーナルApplied Physics Express
4
発行部数12
DOI
出版物ステータス出版済み - 12 1 2011

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Electron traps
Atomic layer deposition
Equivalent circuits
Hysteresis
Surface treatment
Heterojunctions
Water
traps
atomic layer epitaxy
surface treatment
equivalent circuits
caps
hysteresis
causes
water
electrons

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

これを引用

Gate operation of InAs/AlGaSb heterostructures with an atomic-layer- deposited insulating layer. / Suzuki, Kyoichi; Harada, Yuichi; Maeda, Fumihiko; Onomitsu, Koji; Yamaguchi, Toru; Muraki, Koji.

:: Applied Physics Express, 巻 4, 番号 12, 125702, 01.12.2011.

研究成果: ジャーナルへの寄稿記事

Suzuki, Kyoichi ; Harada, Yuichi ; Maeda, Fumihiko ; Onomitsu, Koji ; Yamaguchi, Toru ; Muraki, Koji. / Gate operation of InAs/AlGaSb heterostructures with an atomic-layer- deposited insulating layer. :: Applied Physics Express. 2011 ; 巻 4, 番号 12.
@article{5135c24503e6429dad7ec18d64538f72,
title = "Gate operation of InAs/AlGaSb heterostructures with an atomic-layer- deposited insulating layer",
abstract = "Surface treatment of the GaSb cap layer is investigated for the gate operation of InAs/AlGaSb heterostructures with an Al 2O 3 insulating layer grown by atomic layer deposition. We show that dilute HCl treatment for only 10 s effectively removes the electron trap states at the GaSb/Al 2O 3 interface and greatly improves the gate operation. In contrast, HCl treatment followed by water rinse results in adverse effects. Using an equivalent circuit model, we deduce the interface trap state density for the no-treatment case to be D it ∼ 10 13cm -2eV -1, which is reduced to well below 10 12 cm -2eV -1 by the HCl treatment. Our data also show that deep donor states in the AlGaSb barrier impede the gate operation and cause gate hysteresis.",
author = "Kyoichi Suzuki and Yuichi Harada and Fumihiko Maeda and Koji Onomitsu and Toru Yamaguchi and Koji Muraki",
year = "2011",
month = "12",
day = "1",
doi = "10.1143/APEX.4.125702",
language = "English",
volume = "4",
journal = "Applied Physics Express",
issn = "1882-0778",
publisher = "Japan Society of Applied Physics",
number = "12",

}

TY - JOUR

T1 - Gate operation of InAs/AlGaSb heterostructures with an atomic-layer- deposited insulating layer

AU - Suzuki, Kyoichi

AU - Harada, Yuichi

AU - Maeda, Fumihiko

AU - Onomitsu, Koji

AU - Yamaguchi, Toru

AU - Muraki, Koji

PY - 2011/12/1

Y1 - 2011/12/1

N2 - Surface treatment of the GaSb cap layer is investigated for the gate operation of InAs/AlGaSb heterostructures with an Al 2O 3 insulating layer grown by atomic layer deposition. We show that dilute HCl treatment for only 10 s effectively removes the electron trap states at the GaSb/Al 2O 3 interface and greatly improves the gate operation. In contrast, HCl treatment followed by water rinse results in adverse effects. Using an equivalent circuit model, we deduce the interface trap state density for the no-treatment case to be D it ∼ 10 13cm -2eV -1, which is reduced to well below 10 12 cm -2eV -1 by the HCl treatment. Our data also show that deep donor states in the AlGaSb barrier impede the gate operation and cause gate hysteresis.

AB - Surface treatment of the GaSb cap layer is investigated for the gate operation of InAs/AlGaSb heterostructures with an Al 2O 3 insulating layer grown by atomic layer deposition. We show that dilute HCl treatment for only 10 s effectively removes the electron trap states at the GaSb/Al 2O 3 interface and greatly improves the gate operation. In contrast, HCl treatment followed by water rinse results in adverse effects. Using an equivalent circuit model, we deduce the interface trap state density for the no-treatment case to be D it ∼ 10 13cm -2eV -1, which is reduced to well below 10 12 cm -2eV -1 by the HCl treatment. Our data also show that deep donor states in the AlGaSb barrier impede the gate operation and cause gate hysteresis.

UR - http://www.scopus.com/inward/record.url?scp=83455228373&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=83455228373&partnerID=8YFLogxK

U2 - 10.1143/APEX.4.125702

DO - 10.1143/APEX.4.125702

M3 - Article

AN - SCOPUS:83455228373

VL - 4

JO - Applied Physics Express

JF - Applied Physics Express

SN - 1882-0778

IS - 12

M1 - 125702

ER -