Gate stack and source/drain junction formations for high-mobility Ge MOSFETs

研究成果: 著書/レポートタイプへの貢献会議での発言

3 引用 (Scopus)

抄録

Ge is of great interest as a candidate channel material for future CMOS devices due to its high intrinsic carrier mobility. To translate this potential into CMOS, high-quality gate-stack and source/drain (S/D) junction formations are essential. We fabricated Ge n- and p-MOSFETs using the gate-stack formation by bilayer (SiO2/GeO2) passivation and using S/D junction formations by thermal diffusion of P and ion implantation of B. The electron and hole channel mobilities of the fabricated MOSFETs were 1097 and 376 cm 2V-1s-1, respectively, despite the very thin GeO2 thickness. We will present the detailed fabrication method and device performance.

元の言語英語
ホスト出版物のタイトルSiGe, Ge, and Related Compounds 5
ホスト出版物のサブタイトルMaterials, Processing, and Devices
ページ205-216
ページ数12
50
エディション9
DOI
出版物ステータス出版済み - 12 1 2012
イベント5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting - Honolulu, HI, 米国
継続期間: 10 7 201210 12 2012

その他

その他5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting
米国
Honolulu, HI
期間10/7/1210/12/12

Fingerprint

Thermal diffusion
Carrier mobility
Passivation
Ion implantation
Fabrication
Electrons

All Science Journal Classification (ASJC) codes

  • Engineering(all)

これを引用

Nakashima, H., Yamamoto, K., Yang, H., & Wang, D. (2012). Gate stack and source/drain junction formations for high-mobility Ge MOSFETs. : SiGe, Ge, and Related Compounds 5: Materials, Processing, and Devices (9 版, 巻 50, pp. 205-216) https://doi.org/10.1149/05009.0205ecst

Gate stack and source/drain junction formations for high-mobility Ge MOSFETs. / Nakashima, Hiroshi; Yamamoto, Keisuke; Yang, Haigui; Wang, Dong.

SiGe, Ge, and Related Compounds 5: Materials, Processing, and Devices. 巻 50 9. 編 2012. p. 205-216.

研究成果: 著書/レポートタイプへの貢献会議での発言

Nakashima, H, Yamamoto, K, Yang, H & Wang, D 2012, Gate stack and source/drain junction formations for high-mobility Ge MOSFETs. : SiGe, Ge, and Related Compounds 5: Materials, Processing, and Devices. 9 Edn, 巻. 50, pp. 205-216, 5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting, Honolulu, HI, 米国, 10/7/12. https://doi.org/10.1149/05009.0205ecst
Nakashima H, Yamamoto K, Yang H, Wang D. Gate stack and source/drain junction formations for high-mobility Ge MOSFETs. : SiGe, Ge, and Related Compounds 5: Materials, Processing, and Devices. 9 版 巻 50. 2012. p. 205-216 https://doi.org/10.1149/05009.0205ecst
Nakashima, Hiroshi ; Yamamoto, Keisuke ; Yang, Haigui ; Wang, Dong. / Gate stack and source/drain junction formations for high-mobility Ge MOSFETs. SiGe, Ge, and Related Compounds 5: Materials, Processing, and Devices. 巻 50 9. 版 2012. pp. 205-216
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