Gate-Tunable Dirac Point of Molecular Doped Graphene

Pablo Solís-Fernández, Susumu Okada, Tohru Sato, Masaharu Tsuji, Hiroki Ago

    研究成果: Contribution to journalArticle査読

    28 被引用数 (Scopus)

    抄録

    Control of the type and density of charge carriers in graphene is essential for its implementation into various practical applications. Here, we demonstrate the gate-tunable doping effect of adsorbed piperidine on graphene. By gradually increasing the amount of adsorbed piperidine, the graphene doping level can be varied from p-to n-type, with the formation of p-n junctions for intermediate coverages. Moreover, the doping effect of the piperidine can be further tuned by the application of large negative back-gate voltages, which increase the doping level of graphene. In addition, the electronic properties of graphene are well preserved due to the noncovalent nature of the interaction between piperidine and graphene. This gate-tunable doping offers an easy, controllable, and nonintrusive method to alter the electronic structure of graphene.

    本文言語英語
    ページ(範囲)2930-2939
    ページ数10
    ジャーナルACS Nano
    10
    2
    DOI
    出版ステータス出版済み - 2 23 2016

    All Science Journal Classification (ASJC) codes

    • Materials Science(all)
    • Engineering(all)
    • Physics and Astronomy(all)

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