Gate-Tunable Spin-Charge Conversion and the Role of Spin-Orbit Interaction in Graphene

S. Dushenko, H. Ago, K. Kawahara, T. Tsuda, S. Kuwabata, T. Takenobu, T. Shinjo, Y. Ando, M. Shiraishi

    研究成果: ジャーナルへの寄稿学術誌査読

    56 被引用数 (Scopus)

    抄録

    The small spin-orbit interaction of carbon atoms in graphene promises a long spin diffusion length and the potential to create a spin field-effect transistor. However, for this reason, graphene was largely overlooked as a possible spin-charge conversion material. We report electric gate tuning of the spin-charge conversion voltage signal in single-layer graphene. Using spin pumping from an yttrium iron garnet ferrimagnetic insulator and ionic liquid top gate, we determined that the inverse spin Hall effect is the dominant spin-charge conversion mechanism in single-layer graphene. From the gate dependence of the electromotive force we showed the dominance of the intrinsic over Rashba spin-orbit interaction, a long-standing question in graphene research.

    本文言語英語
    論文番号166102
    ジャーナルPhysical review letters
    116
    16
    DOI
    出版ステータス出版済み - 4月 21 2016

    !!!All Science Journal Classification (ASJC) codes

    • 物理学および天文学(全般)

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