Ge field-effect transistor with asymmetric metal source/drain fabricated on Ge-on-Insulator

Schottky tunneling source mode operation and conventional mode operation

Keisuke Yamamoto, Kohei Nakae, Dong Wang, Hiroshi Nakashima, Zhongying Xue, Miao Zhang, Zengfeng Di

研究成果: ジャーナルへの寄稿記事

抄録

An asymmetric Schottky tunneling source field-effect transistor (STS FET) is a prospective device structure to suppress the short-channel effect. Recently, we succeeded in the fabrication and operation of a Ge-STS n-channel FET with TiN and PtGe asymmetric metal source/drain (S/D) on a bulk Ge substrate. However, the Ge-STS p-channel FET has not been demonstrated yet. In this study, we fabricated an asymmetric metal S/D FET with the same S/D structure on a bulk Ge and a Ge-on-Insulator (GOI) substrate. The GOI was made by using the Smart-CutTM technique. The device fabricated on a bulk Ge did not operate. On the other hand, the fabricated FET on a GOI, which has a taper-shaped TiN/Ge source interface, showed STS p-FET behavior. These results suggest that the carrier injection can be improved by the optimization of the device structure. As an auxiliary effect, conventional metal-oxide-semiconductor (MOS) FET operation was also observed, thanks to GOI introduction. We demonstrated both STS mode and MOSFET mode operation in the same device on GOI.

元の言語英語
記事番号SBBA14
ジャーナルJapanese Journal of Applied Physics
58
発行部数SB
DOI
出版物ステータス出版済み - 1 1 2019

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Field effect transistors
field effect transistors
insulators
space transportation system
Metals
metals
Substrates
carrier injection
tapering
metal oxide semiconductors
Fabrication
fabrication
optimization

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

これを引用

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title = "Ge field-effect transistor with asymmetric metal source/drain fabricated on Ge-on-Insulator: Schottky tunneling source mode operation and conventional mode operation",
abstract = "An asymmetric Schottky tunneling source field-effect transistor (STS FET) is a prospective device structure to suppress the short-channel effect. Recently, we succeeded in the fabrication and operation of a Ge-STS n-channel FET with TiN and PtGe asymmetric metal source/drain (S/D) on a bulk Ge substrate. However, the Ge-STS p-channel FET has not been demonstrated yet. In this study, we fabricated an asymmetric metal S/D FET with the same S/D structure on a bulk Ge and a Ge-on-Insulator (GOI) substrate. The GOI was made by using the Smart-CutTM technique. The device fabricated on a bulk Ge did not operate. On the other hand, the fabricated FET on a GOI, which has a taper-shaped TiN/Ge source interface, showed STS p-FET behavior. These results suggest that the carrier injection can be improved by the optimization of the device structure. As an auxiliary effect, conventional metal-oxide-semiconductor (MOS) FET operation was also observed, thanks to GOI introduction. We demonstrated both STS mode and MOSFET mode operation in the same device on GOI.",
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T1 - Ge field-effect transistor with asymmetric metal source/drain fabricated on Ge-on-Insulator

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AU - Yamamoto, Keisuke

AU - Nakae, Kohei

AU - Wang, Dong

AU - Nakashima, Hiroshi

AU - Xue, Zhongying

AU - Zhang, Miao

AU - Di, Zengfeng

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N2 - An asymmetric Schottky tunneling source field-effect transistor (STS FET) is a prospective device structure to suppress the short-channel effect. Recently, we succeeded in the fabrication and operation of a Ge-STS n-channel FET with TiN and PtGe asymmetric metal source/drain (S/D) on a bulk Ge substrate. However, the Ge-STS p-channel FET has not been demonstrated yet. In this study, we fabricated an asymmetric metal S/D FET with the same S/D structure on a bulk Ge and a Ge-on-Insulator (GOI) substrate. The GOI was made by using the Smart-CutTM technique. The device fabricated on a bulk Ge did not operate. On the other hand, the fabricated FET on a GOI, which has a taper-shaped TiN/Ge source interface, showed STS p-FET behavior. These results suggest that the carrier injection can be improved by the optimization of the device structure. As an auxiliary effect, conventional metal-oxide-semiconductor (MOS) FET operation was also observed, thanks to GOI introduction. We demonstrated both STS mode and MOSFET mode operation in the same device on GOI.

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