Ge field-effect transistor with asymmetric metal source/drain fabricated on Ge-on-Insulator: Schottky tunneling source mode operation and conventional mode operation

Keisuke Yamamoto, Kohei Nakae, Dong Wang, Hiroshi Nakashima, Zhongying Xue, Miao Zhang, Zengfeng Di

研究成果: Contribution to journalArticle査読

抄録

An asymmetric Schottky tunneling source field-effect transistor (STS FET) is a prospective device structure to suppress the short-channel effect. Recently, we succeeded in the fabrication and operation of a Ge-STS n-channel FET with TiN and PtGe asymmetric metal source/drain (S/D) on a bulk Ge substrate. However, the Ge-STS p-channel FET has not been demonstrated yet. In this study, we fabricated an asymmetric metal S/D FET with the same S/D structure on a bulk Ge and a Ge-on-Insulator (GOI) substrate. The GOI was made by using the Smart-CutTM technique. The device fabricated on a bulk Ge did not operate. On the other hand, the fabricated FET on a GOI, which has a taper-shaped TiN/Ge source interface, showed STS p-FET behavior. These results suggest that the carrier injection can be improved by the optimization of the device structure. As an auxiliary effect, conventional metal-oxide-semiconductor (MOS) FET operation was also observed, thanks to GOI introduction. We demonstrated both STS mode and MOSFET mode operation in the same device on GOI.

本文言語英語
論文番号SBBA14
ジャーナルJapanese journal of applied physics
58
SB
DOI
出版ステータス出版済み - 2019

All Science Journal Classification (ASJC) codes

  • 工学(全般)
  • 物理学および天文学(全般)

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