抄録
Al-induced crystallization of Si1-xGex films (x=0-0.5) has been investigated by using amorphous SiGe (a-SiGe)/Al structures to realize polycrystalline SiGe (poly-Si) layers on in-sulating films at low temperatures. For the Si sample, poly-Si oriented to the (111) direction was formed after annealing (450 °C, 20 h) and inversion of Si/Al layers occurred completely. For Si1-xGex samples (x > 0), the layer exchange occurred in partial areas and poly-SiGe with the (111) orientation was grown only in the exchanged areas. The Ge fractions of the crystallized SiGe were almost the same as those of the initial a-SiGe layers. The diameters of the crystallized areas decreased from ∼100 (x = 0) to ∼30 μm (x = 0.5) with increasing Ge fraction. This technique can be utilized for the formation of high-quality poly-SiGe at low temperatures.
| 元の言語 | 英語 |
|---|---|
| ページ（範囲） | 451-454 |
| ページ数 | 4 |
| ジャーナル | Journal of the Korean Physical Society |
| 巻 | 54 |
| 発行部数 | 1 PART 2 |
| 出版物ステータス | 出版済み - 1 1 2009 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)
これを引用
Ge fraction dependence of Al-induced crystallization of SiGe at low temperatures. / Kurosawa, Masashi; Tsumura, Yoshitaka; Sadoh, Taizoh; Miyao, Masanobu.
：: Journal of the Korean Physical Society, 巻 54, 番号 1 PART 2, 01.01.2009, p. 451-454.研究成果: ジャーナルへの寄稿 › 記事
}
TY - JOUR
T1 - Ge fraction dependence of Al-induced crystallization of SiGe at low temperatures
AU - Kurosawa, Masashi
AU - Tsumura, Yoshitaka
AU - Sadoh, Taizoh
AU - Miyao, Masanobu
PY - 2009/1/1
Y1 - 2009/1/1
N2 - Al-induced crystallization of Si1-xGex films (x=0-0.5) has been investigated by using amorphous SiGe (a-SiGe)/Al structures to realize polycrystalline SiGe (poly-Si) layers on in-sulating films at low temperatures. For the Si sample, poly-Si oriented to the (111) direction was formed after annealing (450 °C, 20 h) and inversion of Si/Al layers occurred completely. For Si1-xGex samples (x > 0), the layer exchange occurred in partial areas and poly-SiGe with the (111) orientation was grown only in the exchanged areas. The Ge fractions of the crystallized SiGe were almost the same as those of the initial a-SiGe layers. The diameters of the crystallized areas decreased from ∼100 (x = 0) to ∼30 μm (x = 0.5) with increasing Ge fraction. This technique can be utilized for the formation of high-quality poly-SiGe at low temperatures.
AB - Al-induced crystallization of Si1-xGex films (x=0-0.5) has been investigated by using amorphous SiGe (a-SiGe)/Al structures to realize polycrystalline SiGe (poly-Si) layers on in-sulating films at low temperatures. For the Si sample, poly-Si oriented to the (111) direction was formed after annealing (450 °C, 20 h) and inversion of Si/Al layers occurred completely. For Si1-xGex samples (x > 0), the layer exchange occurred in partial areas and poly-SiGe with the (111) orientation was grown only in the exchanged areas. The Ge fractions of the crystallized SiGe were almost the same as those of the initial a-SiGe layers. The diameters of the crystallized areas decreased from ∼100 (x = 0) to ∼30 μm (x = 0.5) with increasing Ge fraction. This technique can be utilized for the formation of high-quality poly-SiGe at low temperatures.
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M3 - Article
AN - SCOPUS:60149098463
VL - 54
SP - 451
EP - 454
JO - Journal of the Korean Physical Society
JF - Journal of the Korean Physical Society
SN - 0374-4884
IS - 1 PART 2
ER -