抄録
Al-induced crystallization of Si1-xGex films (x=0-0.5) has been investigated by using amorphous SiGe (a-SiGe)/Al structures to realize polycrystalline SiGe (poly-Si) layers on in-sulating films at low temperatures. For the Si sample, poly-Si oriented to the (111) direction was formed after annealing (450 °C, 20 h) and inversion of Si/Al layers occurred completely. For Si1-xGex samples (x > 0), the layer exchange occurred in partial areas and poly-SiGe with the (111) orientation was grown only in the exchanged areas. The Ge fractions of the crystallized SiGe were almost the same as those of the initial a-SiGe layers. The diameters of the crystallized areas decreased from ∼100 (x = 0) to ∼30 μm (x = 0.5) with increasing Ge fraction. This technique can be utilized for the formation of high-quality poly-SiGe at low temperatures.
本文言語 | 英語 |
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ページ(範囲) | 451-454 |
ページ数 | 4 |
ジャーナル | Journal of the Korean Physical Society |
巻 | 54 |
号 | 1 PART 2 |
DOI | |
出版ステータス | 出版済み - 1月 2009 |
!!!All Science Journal Classification (ASJC) codes
- 物理学および天文学(全般)