Gettering of crystalline defects in Si by bending

Renshi Sawada, T. Karaki, J. Watanabe

研究成果: ジャーナルへの寄稿記事

1 引用 (Scopus)

抜粋

Suppression of oxidation-induced stacking faults and microdefects in a Si wafer, subjected to bending during thermal oxidation, was studied. Straight dislocations were introduced only at the neutral plane in Si bulk, during bending in a furnace and retained as sinks through all subsequent high-temperature processings, thereby continuing to suppress the formation of oxidation-induced stacking faults and microdefects. Gettering while applying bending stress to the wafer is described, including the formation mechanism for dislocations at the neutral region.

元の言語英語
ページ(範囲)368-369
ページ数2
ジャーナルApplied Physics Letters
38
発行部数5
DOI
出版物ステータス出版済み - 12 1 1981

    フィンガープリント

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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