Gettering of crystalline defects in Si by bending

R. Sawada, T. Karaki, J. Watanabe

    研究成果: Contribution to journalArticle査読

    1 被引用数 (Scopus)

    抄録

    Suppression of oxidation-induced stacking faults and microdefects in a Si wafer, subjected to bending during thermal oxidation, was studied. Straight dislocations were introduced only at the neutral plane in Si bulk, during bending in a furnace and retained as sinks through all subsequent high-temperature processings, thereby continuing to suppress the formation of oxidation-induced stacking faults and microdefects. Gettering while applying bending stress to the wafer is described, including the formation mechanism for dislocations at the neutral region.

    本文言語英語
    ページ(範囲)368-369
    ページ数2
    ジャーナルApplied Physics Letters
    38
    5
    DOI
    出版ステータス出版済み - 1981

    All Science Journal Classification (ASJC) codes

    • 物理学および天文学(その他)

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