Gold-induced low-temperature (≤300°C) growth of quasi-single crystal SiGe on insulator for advanced flexible electronics

T. Sadoh, J. H. Park, R. Aoki, M. Miyao

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

抄録

A low-temperature (≤300°C) growth technique of quasi-single crystal, i.e., orientation-controlled large-grain (≥10 μm), Ge-related semiconductors, on insulator is desired for realization of advanced flexible electronics. To achieve this, we have developed the gold-induced layer-exchange crystallization technique using a-SiGe/Au stacked structures. By introduction of a diffusion barrier with appropriate thickness into the a-SiGe/Au interface, (111)-oriented quasi-single crystal SiGe is achieved on insulating substrates at low temperatures (∼300°C). Based on these results, this technique is developed to form quasi-single crystal Ge on flexible plastic sheets. The grown layers have high carrier mobility, because residual Au hardly deteriorates the electrical properties of grown layers due to the low solubility of Au in Ge. This technique will facilitate the realization of advanced flexible electronics.

本文言語英語
ホスト出版物のタイトルULSI Process Integration 9
編集者C. Claeys, J. Murota, M. Tao, H. Iwai, S. Deleonibus
出版社Electrochemical Society Inc.
ページ21-27
ページ数7
10
ISBN(電子版)9781607685395
DOI
出版ステータス出版済み - 2015
イベントSymposium on ULSI Process Integration 9 - 228th ECS Meeting - Phoenix, 米国
継続期間: 10 11 201510 15 2015

出版物シリーズ

名前ECS Transactions
番号10
69
ISSN(印刷版)1938-6737
ISSN(電子版)1938-5862

その他

その他Symposium on ULSI Process Integration 9 - 228th ECS Meeting
国/地域米国
CityPhoenix
Period10/11/1510/15/15

All Science Journal Classification (ASJC) codes

  • 工学(全般)

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