抄録
Graphene nanoribbons (GNRs) were grown on n-type vicinal 6H-SiC substrates as a template, consisting of periodic nanosurface, by chemical vapor deposition (CVD). Selective growth was achieved and resulted in narrow (5-10nm width) and millimeter-long GNRs. The GNRs contained randomly rotated domains, however, initial nuclei indicated single domain features, possibly aligned to step edges. The resistivity measurement on GNRs grown on semi-insulating SiC substrate indicated transport properties only along GNRs but no current flow across GNRs, indicating growth of electrically isolated bunches of GNRs.
| 元の言語 | 英語 |
|---|---|
| 記事番号 | 055102 |
| ジャーナル | Applied Physics Express |
| 巻 | 6 |
| 発行部数 | 5 |
| DOI | |
| 出版物ステータス | 出版済み - 5 1 2013 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)
これを引用
Graphene nanoribbons grown on epitaxial SixCyOz layer on Vicinal SiC(0001) surfaces by chemical vapor deposition. / Hagihara, Yoshihito; Kajiwara, Takashi; Visikovskiy, Anton; Satoru, Tanaka.
：: Applied Physics Express, 巻 6, 番号 5, 055102, 01.05.2013.研究成果: ジャーナルへの寄稿 › 記事
}
TY - JOUR
T1 - Graphene nanoribbons grown on epitaxial SixCyOz layer on Vicinal SiC(0001) surfaces by chemical vapor deposition
AU - Hagihara, Yoshihito
AU - Kajiwara, Takashi
AU - Visikovskiy, Anton
AU - Satoru, Tanaka
PY - 2013/5/1
Y1 - 2013/5/1
N2 - Graphene nanoribbons (GNRs) were grown on n-type vicinal 6H-SiC substrates as a template, consisting of periodic nanosurface, by chemical vapor deposition (CVD). Selective growth was achieved and resulted in narrow (5-10nm width) and millimeter-long GNRs. The GNRs contained randomly rotated domains, however, initial nuclei indicated single domain features, possibly aligned to step edges. The resistivity measurement on GNRs grown on semi-insulating SiC substrate indicated transport properties only along GNRs but no current flow across GNRs, indicating growth of electrically isolated bunches of GNRs.
AB - Graphene nanoribbons (GNRs) were grown on n-type vicinal 6H-SiC substrates as a template, consisting of periodic nanosurface, by chemical vapor deposition (CVD). Selective growth was achieved and resulted in narrow (5-10nm width) and millimeter-long GNRs. The GNRs contained randomly rotated domains, however, initial nuclei indicated single domain features, possibly aligned to step edges. The resistivity measurement on GNRs grown on semi-insulating SiC substrate indicated transport properties only along GNRs but no current flow across GNRs, indicating growth of electrically isolated bunches of GNRs.
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UR - http://www.scopus.com/inward/citedby.url?scp=84880900056&partnerID=8YFLogxK
U2 - 10.7567/APEX.6.055102
DO - 10.7567/APEX.6.055102
M3 - Article
VL - 6
JO - Applied Physics Express
JF - Applied Physics Express
SN - 1882-0778
IS - 5
M1 - 055102
ER -