Graphene nanoribbons grown on epitaxial SixCyOz layer on Vicinal SiC(0001) surfaces by chemical vapor deposition

Yoshihito Hagihara, Takashi Kajiwara, Anton Visikovskiy, Satoru Tanaka

研究成果: ジャーナルへの寄稿記事

3 引用 (Scopus)

抄録

Graphene nanoribbons (GNRs) were grown on n-type vicinal 6H-SiC substrates as a template, consisting of periodic nanosurface, by chemical vapor deposition (CVD). Selective growth was achieved and resulted in narrow (5-10nm width) and millimeter-long GNRs. The GNRs contained randomly rotated domains, however, initial nuclei indicated single domain features, possibly aligned to step edges. The resistivity measurement on GNRs grown on semi-insulating SiC substrate indicated transport properties only along GNRs but no current flow across GNRs, indicating growth of electrically isolated bunches of GNRs.

元の言語英語
記事番号055102
ジャーナルApplied Physics Express
6
発行部数5
DOI
出版物ステータス出版済み - 5 1 2013

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Nanoribbons
Epitaxial layers
Graphene
Chemical vapor deposition
graphene
vapor deposition
Substrates
Transport properties
templates
transport properties
electrical resistivity
nuclei

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

これを引用

Graphene nanoribbons grown on epitaxial SixCyOz layer on Vicinal SiC(0001) surfaces by chemical vapor deposition. / Hagihara, Yoshihito; Kajiwara, Takashi; Visikovskiy, Anton; Tanaka, Satoru.

:: Applied Physics Express, 巻 6, 番号 5, 055102, 01.05.2013.

研究成果: ジャーナルへの寄稿記事

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