Graphene optical modulator on silicon waveguide controlled by fine metal-Top gate

D. Y. Hori, R. Kou, T. Tsuchizawa, Y. Kobayashi, Yuichi Harada, H. Hibino, T. Yamamoto, K. Yamada, H. Nakajima

研究成果: 著書/レポートタイプへの貢献会議での発言

抜粋

We proposed a fine-metal gated graphene optical modulator on a CMOS compatible silicon photonic platform. A maximum extinction ratio of 1.2dB is realized by using a 25-nm thick Al 2 O 3 gate capacitor. Optimized device structure and initial Fermi energy dependences are discussed.

元の言語英語
ホスト出版物のタイトル2016 IEEE 13th International Conference on Group IV Photonics, GFP 2016
出版者IEEE Computer Society
ページ90-91
ページ数2
ISBN(電子版)9781509019038
DOI
出版物ステータス出版済み - 11 8 2016
イベント13th IEEE International Conference on Group IV Photonics, GFP 2016 - Shanghai, 中国
継続期間: 8 24 20168 26 2016

出版物シリーズ

名前IEEE International Conference on Group IV Photonics GFP
2016-November
ISSN(印刷物)1949-2081

その他

その他13th IEEE International Conference on Group IV Photonics, GFP 2016
中国
Shanghai
期間8/24/168/26/16

    フィンガープリント

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials

これを引用

Hori, D. Y., Kou, R., Tsuchizawa, T., Kobayashi, Y., Harada, Y., Hibino, H., ... Nakajima, H. (2016). Graphene optical modulator on silicon waveguide controlled by fine metal-Top gate. : 2016 IEEE 13th International Conference on Group IV Photonics, GFP 2016 (pp. 90-91). [7739064] (IEEE International Conference on Group IV Photonics GFP; 巻数 2016-November). IEEE Computer Society. https://doi.org/10.1109/GROUP4.2016.7739064