抄録
Epitaxial graphene growth on SiC surfaces is considered advantageous in terms of device application. However, the first graphitic layer on SiC transforms to a buffer layer because of strong coupling with the substrate. The properties of several subsequent layers are also significantly degraded. One method to decouple graphene from the substrate is Si intercalation. In the present work, we report observation and analysis of interface structures formed by Si intercalation in between the graphene layer and the SiC(0001) surface depending on Si coverage and influence of these interfaces on graphene electronic structure by means of low-energy electron diffraction (LEED), scanning tunneling microscopy (STM), angle-resolved photoemission spectroscopy (ARPES), and theoretical first-principles calculations. The STM appearance of observed periodic interface structures strongly resembles previously known Si-rich phases on the SiC(0001) surface. Based on the observed range of interface structures we discuss the mechanism of graphene layer decoupling and differences in stability of the Si-rich phases on clean SiC(0001) and in the graphene/SiC(0001) interface region. We also discuss a possibility to tune graphene electronic properties by interface engineering.
| 元の言語 | 英語 |
|---|---|
| 記事番号 | 245421 |
| ジャーナル | Physical Review B |
| 巻 | 94 |
| 発行部数 | 24 |
| DOI | |
| 出版物ステータス | 出版済み - 12 19 2016 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
これを引用
Graphene/SiC(0001) interface structures induced by Si intercalation and their influence on electronic properties of graphene. / Visikovskiy, Anton; Kimoto, Shin Ichi; Kajiwara, Takashi; Yoshimura, Masamichi; Iimori, Takushi; Komori, Fumio; Satoru, Tanaka.
：: Physical Review B, 巻 94, 番号 24, 245421, 19.12.2016.研究成果: ジャーナルへの寄稿 › 記事
}
TY - JOUR
T1 - Graphene/SiC(0001) interface structures induced by Si intercalation and their influence on electronic properties of graphene
AU - Visikovskiy, Anton
AU - Kimoto, Shin Ichi
AU - Kajiwara, Takashi
AU - Yoshimura, Masamichi
AU - Iimori, Takushi
AU - Komori, Fumio
AU - Satoru, Tanaka
PY - 2016/12/19
Y1 - 2016/12/19
N2 - Epitaxial graphene growth on SiC surfaces is considered advantageous in terms of device application. However, the first graphitic layer on SiC transforms to a buffer layer because of strong coupling with the substrate. The properties of several subsequent layers are also significantly degraded. One method to decouple graphene from the substrate is Si intercalation. In the present work, we report observation and analysis of interface structures formed by Si intercalation in between the graphene layer and the SiC(0001) surface depending on Si coverage and influence of these interfaces on graphene electronic structure by means of low-energy electron diffraction (LEED), scanning tunneling microscopy (STM), angle-resolved photoemission spectroscopy (ARPES), and theoretical first-principles calculations. The STM appearance of observed periodic interface structures strongly resembles previously known Si-rich phases on the SiC(0001) surface. Based on the observed range of interface structures we discuss the mechanism of graphene layer decoupling and differences in stability of the Si-rich phases on clean SiC(0001) and in the graphene/SiC(0001) interface region. We also discuss a possibility to tune graphene electronic properties by interface engineering.
AB - Epitaxial graphene growth on SiC surfaces is considered advantageous in terms of device application. However, the first graphitic layer on SiC transforms to a buffer layer because of strong coupling with the substrate. The properties of several subsequent layers are also significantly degraded. One method to decouple graphene from the substrate is Si intercalation. In the present work, we report observation and analysis of interface structures formed by Si intercalation in between the graphene layer and the SiC(0001) surface depending on Si coverage and influence of these interfaces on graphene electronic structure by means of low-energy electron diffraction (LEED), scanning tunneling microscopy (STM), angle-resolved photoemission spectroscopy (ARPES), and theoretical first-principles calculations. The STM appearance of observed periodic interface structures strongly resembles previously known Si-rich phases on the SiC(0001) surface. Based on the observed range of interface structures we discuss the mechanism of graphene layer decoupling and differences in stability of the Si-rich phases on clean SiC(0001) and in the graphene/SiC(0001) interface region. We also discuss a possibility to tune graphene electronic properties by interface engineering.
UR - http://www.scopus.com/inward/record.url?scp=85009775304&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85009775304&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.94.245421
DO - 10.1103/PhysRevB.94.245421
M3 - Article
AN - SCOPUS:85009775304
VL - 94
JO - Physical Review B
JF - Physical Review B
SN - 2469-9950
IS - 24
M1 - 245421
ER -