TY - JOUR
T1 - Growth and carrier transport performance of single-crystalline monolayer graphene over electrodeposited copper film on quartz glass
AU - Zhang, Chitengfei
AU - Tu, Rong
AU - Liu, Liu
AU - Li, Jun
AU - Dong, Mingdong
AU - Wang, Zegao
AU - Shi, Ji
AU - Li, Haiwen
AU - Ohmori, Hitoshi
AU - Zhang, Song
AU - Zhang, Lianmeng
AU - Goto, Takashi
N1 - Funding Information:
This work was supported by the Joint Fund of the Ministry of Education for Pre-research of Equipment ( 201922JJ02 ), the Science Challenge Project (No. TZ2016001 ), the National Natural Science Foundation of China (Nos. 11602251 , 51861145306 and 51872212 ), and the 111 Project ( B13035 ). It was also supported by the International Science & Technology Cooperation Program of China ( 2014DFA53090 , 2018YFE0103600 ), the Technological Innovation of Hubei Province, China ( 2019AAA030 ), the Fundamental Research Funds for the Central Universities (WUT: 2018YS003 , 2018YS016 , 2019III030 , 2019III028 ), and the State Key Laboratory of Advanced Technology for Materials Synthesis and Processing (WUT, Grant No. 2019-KF-12 ).
Publisher Copyright:
© 2019 Elsevier Ltd and Techna Group S.r.l.
PY - 2019/12/15
Y1 - 2019/12/15
N2 - The synthesis of single crystal graphene domains on cold rolling Cu foil has recently been reported. However, the cold rolling Cu foils have many rolling lines that increase the roughness of the foil. In this work, we developed an electrodeposited method to achieve high-quality Cu film on which the nucleation density of graphene decreased greatly. The Cu film was electrodeposited over chemical plated silver film on quartz glass. The roughness and thickness of the Cu film were positively correlated with the deposition temperature and current density, respectively. High-quality single crystal graphene with low nucleation density was achieved on electrodeposited Cu film. With increasing deposition temperature of Cu film from 20 to 65 °C, the nucleation density of graphene increased from 124 to 448 mm−2. The nucleation density of graphene increased from 124 to 192 mm−2 with increasing current density from 0.03 to 0.07 A/cm−2. Finally, a back-gated graphene field effect transistor (FET) was fabricated with a carrier transport performance of μh = ~4041 cm2V−1s−1 and μe = ~2580 cm2V−1s−1 at room temperature.
AB - The synthesis of single crystal graphene domains on cold rolling Cu foil has recently been reported. However, the cold rolling Cu foils have many rolling lines that increase the roughness of the foil. In this work, we developed an electrodeposited method to achieve high-quality Cu film on which the nucleation density of graphene decreased greatly. The Cu film was electrodeposited over chemical plated silver film on quartz glass. The roughness and thickness of the Cu film were positively correlated with the deposition temperature and current density, respectively. High-quality single crystal graphene with low nucleation density was achieved on electrodeposited Cu film. With increasing deposition temperature of Cu film from 20 to 65 °C, the nucleation density of graphene increased from 124 to 448 mm−2. The nucleation density of graphene increased from 124 to 192 mm−2 with increasing current density from 0.03 to 0.07 A/cm−2. Finally, a back-gated graphene field effect transistor (FET) was fabricated with a carrier transport performance of μh = ~4041 cm2V−1s−1 and μe = ~2580 cm2V−1s−1 at room temperature.
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U2 - 10.1016/j.ceramint.2019.08.137
DO - 10.1016/j.ceramint.2019.08.137
M3 - Article
AN - SCOPUS:85070691935
VL - 45
SP - 24254
EP - 24259
JO - Ceramics International
JF - Ceramics International
SN - 0272-8842
IS - 18
ER -