Growth and carrier transport performance of single-crystalline monolayer graphene over electrodeposited copper film on quartz glass

Chitengfei Zhang, Rong Tu, Liu Liu, Jun Li, Mingdong Dong, Zegao Wang, Ji Shi, Haiwen Li, Hitoshi Ohmori, Song Zhang, Lianmeng Zhang, Takashi Goto

研究成果: ジャーナルへの寄稿学術誌査読

3 被引用数 (Scopus)

抄録

The synthesis of single crystal graphene domains on cold rolling Cu foil has recently been reported. However, the cold rolling Cu foils have many rolling lines that increase the roughness of the foil. In this work, we developed an electrodeposited method to achieve high-quality Cu film on which the nucleation density of graphene decreased greatly. The Cu film was electrodeposited over chemical plated silver film on quartz glass. The roughness and thickness of the Cu film were positively correlated with the deposition temperature and current density, respectively. High-quality single crystal graphene with low nucleation density was achieved on electrodeposited Cu film. With increasing deposition temperature of Cu film from 20 to 65 °C, the nucleation density of graphene increased from 124 to 448 mm−2. The nucleation density of graphene increased from 124 to 192 mm−2 with increasing current density from 0.03 to 0.07 A/cm−2. Finally, a back-gated graphene field effect transistor (FET) was fabricated with a carrier transport performance of μh = ~4041 cm2V−1s−1 and μe = ~2580 cm2V−1s−1 at room temperature.

本文言語英語
ページ(範囲)24254-24259
ページ数6
ジャーナルCeramics International
45
18
DOI
出版ステータス出版済み - 12月 15 2019

!!!All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • セラミックおよび複合材料
  • プロセス化学およびプロセス工学
  • 表面、皮膜および薄膜
  • 材料化学

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