抄録
Epitaxial insulator films composed of compositionally fixed (Ca, Sr)F2/compositionally graded (Ca, Sr)F2/CaF2 multilayers have been grown on Si(111) substrates by the coevaporation of CaF2 and SrF2 from two separate crucibles The dependence of the channeling minimum yields on the energy of incident ions in Rutherford backscattering spectroscopy revealed that defects in the top fluoride layers were mainly dislocations. The dislocation density could be reduced by decreasing the compositional gradient of the underlying graded layers and decreasing the growth temperature. As a result of the reduced dislocation density, the generation of cracks in fluoride films could be suppressed.
| 元の言語 | 英語 |
|---|---|
| ページ（範囲） | 848-851 |
| ページ数 | 4 |
| ジャーナル | Japanese Journal of Applied Physics |
| 巻 | 26 |
| 発行部数 | 6R |
| DOI | |
| 出版物ステータス | 出版済み - 6 1987 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)
これを引用
Growth and characterization of compositionally graded (ca, sr)f2 layers on si(111) substrates. / Kanemaru, Seigo; Ishiwara, Hiroshi; Asano, Tanemasa; Furukawa, Seijiro.
：: Japanese Journal of Applied Physics, 巻 26, 番号 6R, 06.1987, p. 848-851.研究成果: ジャーナルへの寄稿 › 記事
}
TY - JOUR
T1 - Growth and characterization of compositionally graded (ca, sr)f2 layers on si(111) substrates
AU - Kanemaru, Seigo
AU - Ishiwara, Hiroshi
AU - Asano, Tanemasa
AU - Furukawa, Seijiro
PY - 1987/6
Y1 - 1987/6
N2 - Epitaxial insulator films composed of compositionally fixed (Ca, Sr)F2/compositionally graded (Ca, Sr)F2/CaF2 multilayers have been grown on Si(111) substrates by the coevaporation of CaF2 and SrF2 from two separate crucibles The dependence of the channeling minimum yields on the energy of incident ions in Rutherford backscattering spectroscopy revealed that defects in the top fluoride layers were mainly dislocations. The dislocation density could be reduced by decreasing the compositional gradient of the underlying graded layers and decreasing the growth temperature. As a result of the reduced dislocation density, the generation of cracks in fluoride films could be suppressed.
AB - Epitaxial insulator films composed of compositionally fixed (Ca, Sr)F2/compositionally graded (Ca, Sr)F2/CaF2 multilayers have been grown on Si(111) substrates by the coevaporation of CaF2 and SrF2 from two separate crucibles The dependence of the channeling minimum yields on the energy of incident ions in Rutherford backscattering spectroscopy revealed that defects in the top fluoride layers were mainly dislocations. The dislocation density could be reduced by decreasing the compositional gradient of the underlying graded layers and decreasing the growth temperature. As a result of the reduced dislocation density, the generation of cracks in fluoride films could be suppressed.
UR - http://www.scopus.com/inward/record.url?scp=0023363607&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0023363607&partnerID=8YFLogxK
U2 - 10.1143/JJAP.26.848
DO - 10.1143/JJAP.26.848
M3 - Article
AN - SCOPUS:0023363607
VL - 26
SP - 848
EP - 851
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 6R
ER -