Growth and characterization of compositionally graded (ca, sr)f2 layers on si(111) substrates

Seigo Kanemaru, Hiroshi Ishiwara, Tanemasa Asano, Seijiro Furukawa

研究成果: ジャーナルへの寄稿記事

2 引用 (Scopus)

抄録

Epitaxial insulator films composed of compositionally fixed (Ca, Sr)F2/compositionally graded (Ca, Sr)F2/CaF2 multilayers have been grown on Si(111) substrates by the coevaporation of CaF2 and SrF2 from two separate crucibles The dependence of the channeling minimum yields on the energy of incident ions in Rutherford backscattering spectroscopy revealed that defects in the top fluoride layers were mainly dislocations. The dislocation density could be reduced by decreasing the compositional gradient of the underlying graded layers and decreasing the growth temperature. As a result of the reduced dislocation density, the generation of cracks in fluoride films could be suppressed.

元の言語英語
ページ(範囲)848-851
ページ数4
ジャーナルJapanese Journal of Applied Physics
26
発行部数6R
DOI
出版物ステータス出版済み - 6 1987

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fluorides
Crucibles
Rutherford backscattering spectroscopy
Growth temperature
Substrates
Multilayers
crucibles
Cracks
Defects
backscattering
Ions
cracks
insulators
gradients
defects
spectroscopy
ions
temperature
energy

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

これを引用

Growth and characterization of compositionally graded (ca, sr)f2 layers on si(111) substrates. / Kanemaru, Seigo; Ishiwara, Hiroshi; Asano, Tanemasa; Furukawa, Seijiro.

:: Japanese Journal of Applied Physics, 巻 26, 番号 6R, 06.1987, p. 848-851.

研究成果: ジャーナルへの寄稿記事

Kanemaru, Seigo ; Ishiwara, Hiroshi ; Asano, Tanemasa ; Furukawa, Seijiro. / Growth and characterization of compositionally graded (ca, sr)f2 layers on si(111) substrates. :: Japanese Journal of Applied Physics. 1987 ; 巻 26, 番号 6R. pp. 848-851.
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